Related papers: Room temperature spin-orbit torque efficiency in s…
The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques…
High-entropy alloy (HEA) is a family of metallic materials with nearly equal partitions of five or more metals, which might possess mechanical and transport properties that are different from conventional binary or tertiary alloys. In this…
Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic…
The electronic and optoelectronic properties of two dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel…
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the…
Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with…
Spin orbit torque (SOT) has become a promising approach to efficiently manipulate the magnetization switching in spintronic devices. As a main factor to impact the device performance, the high quality interface is essentially desired, which…
We demonstrate a high-quality spin orbit torque nano-oscillator comprised of spin wave modes confined by the magnetic field by the strongly inhomogeneous dipole field of a nearby micromagnet. This approach enables variable spatial…
We report a magnetotransport study of spin relaxation in 1.4-21.2 nm epitaxial SrIrO$_3$ thin films coherently strained on SrTiO$_3$ substrates. Fully charge compensated semimetallic transport has been observed in SrIrO$_3$ films thicker…
Antiferromagnetic materials are outstanding candidates for next generation spintronic applications, because their ultrafast spin dynamics makes it possible to realize several orders of magnitude higher-speed devices than conventional…
We investigated the magnetotransport of InAs nanowires grown by selective area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctuations in the conductance upon variation of the magnetic…
The capability of the spin-orbit torque (SOT) generated via phenomena such as the spin Hall effect in heavy metals, in switching the magnetization of an adjacent magnetic material, has been studied extensively over the last decade. The…
A longstanding goal of spintronics is to inject, coherently transport, and detect spins in a semiconductor nanowire where a SINGLE quantized subband is occupied at room temperature. Here, we report achieving this goal in 50-nm diameter InSb…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
Materials with strong spin-orbit coupling and low crystalline symmetry are promising for generating large unconventional spin-orbit torques (SOTs), such as in-plane field-like (FL) torques and out-of-plane damping-like (DL) torques, which…
We investigate theoretically the spin torque and magnetization dynamic in a thin ferromagnetic (FM) layer with spatially varying magnetization. The FM layer is deposited on the surface of a topological insulator (TI). In the limit of the…
The manipulation of magnetization via Magnetic torques is one of the most important phenomena in spintronics. In thin films, conventionally, a charge current flowing in a heavy metal is used to generate transverse spin currents and to exert…
Ferrimagnets have the potential to play a key role in spintronics due to their high stability, low energy consumption, and rapid magnetic state switching. These characteristics are typically observed in ferrimagnetic materials near magnetic…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…