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The microstructure of the Ti-Al binary system is an area of great interest as it affects material properties and plasticity. Phase transformations induce microstructural changes; therefore, accurately modeling the phase transformations of…

Materials Science · Physics 2024-11-13 Micah Nichols , Christopher D. Barrett , Doyl E. Dickel , Mashroor S. Nitol , Saryu J. Fensin

Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to…

Optics · Physics 2018-10-04 K. V. Baryshnikova , M. I. Petrov , V. E. Babicheva , P. A. Belov

Silicon (Si) is one of the most abundant elements on Earth, and it is the most important and widely used semiconductor, constituting the basis of modern electronic devices. Despite extensive study, some properties of Si remain elusive. For…

Si and its oxides have been extensively explored in theoretical research due to their technological and industrial importance. Simultaneously describing interatomic interactions within both Si and SiO$_2$ without the use of \textit{ab…

Materials Science · Physics 2024-07-29 Karim Zongo , Hao Sun , Claudiane Ouellet-Plamondon , Laurent Karim Béland

Silicon photonics has attracted significant interest in recent years due to its potential in integrated photonics components (1,2) as well as all-dielectric meta-optics elements.(3) Strong photon-photon interactions, aka optical…

In this work we report new silicon and germanium tubular nanostructures with no corresponding stable carbon analogues. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show…

Mesoscale and Nanoscale Physics · Physics 2014-10-03 Eric Perim , Ricardo Paupitz , Tiago Botari , Douglas S. Galvao

We present an information-based total-energy optimization method to produce nearly defect-free structural models of amorphous silicon. Using geometrical, structural and topological information from disordered tetrahedral networks, we have…

Disordered Systems and Neural Networks · Physics 2019-01-28 Dil K. Limbu , Raymond Atta-Fynn , Parthapratim Biswas

Parallelism of tight-binding molecular dynamics simulations is presented by means of the order-N electronic structure theory with the Wannier states, recently developed (J. Phys. Soc. Jpn. 69,3773 (2000)). An application is tested for…

Materials Science · Physics 2009-11-10 Masaaki Geshi , Takeo Hoshi , Takeo Fujiwara

Characteristic shock effects in silica serve as a key indicator of historical impacts at geological sites. Despite this geological significance, atomistic details of structural transformations under high pressure and shock compression…

Materials Science · Physics 2025-04-16 Linus C. Erhard , Christoph Otzen , Jochen Rohrer , Clemens Prescher , Karsten Albe

We compare the models that have been proposed in the literature for the atomic structure of the 90-degree partial dislocation in the homopolar semiconductors, silicon, diamond, and germanium. In particular, we examine the traditional…

Materials Science · Physics 2009-10-31 R. W. Nunes , David Vanderbilt

Molecular-dynamics simulation can give atomistic information on the processes occurring in nanoindentation experiments. In particular, the nucleation of dislocation loops, their growth, interaction and motion can be studied. We investigate…

Materials Science · Physics 2015-05-13 Gerolf Ziegenhain , Alexander Hartmaier , Herbert M. Urbassek

Kinetic 3D lattice Monte Carlo studies are presented on Si nanocrystal (NC) formation by phase separation in 1 keV Si implanted thin SiO2 films. The simulation start from Si depth profiles calculated using the dynamic, high-fluence binary…

Materials Science · Physics 2007-05-23 T. Mueller , K. -H. Heinig , W. Moeller

As it is known from visible light experiments, silicon under femtosecond pulse irradiation can undergo the so-called 'nonthermal melting' if the density of electrons excited from the valence to the conduction band overcomes a certain…

Materials Science · Physics 2015-04-21 Nikita Medvedev , Zheng Li , Beata Ziaja

Germanium is an extremely important material used for numerous functional applications in many fields of nanotechnology. In this paper, we study the crystallization of amorphous Ge using atomistic simulations of critical nano-metric nuclei…

Materials Science · Physics 2015-07-15 Luis A. Sandoval , Celia Reina , Jaime Marian

We present a real-space formulation and implementation of Kohn-Sham Density Functional Theory suited to twisted geometries, and apply it to the study of torsional deformations of X (X = C, Si, Ge, Sn) nanotubes. Our formulation is based on…

Materials Science · Physics 2022-04-20 Hsuan Ming Yu , Amartya S. Banerjee

In this study nanoscale structure and associated energy dissipation behavior of nanoparticulates of tungsten disulphide (WS2) and nanoparticles of gold (Au) were investigated by advanced scanning probe and electron microscopy techniques.…

Mesoscale and Nanoscale Physics · Physics 2013-11-13 D. Devaprakasam

Silicon carbide (SiC) is an important technological material, but its high-temperature phase diagram has remained unclear due to conflicting experimental results about congruent versus incongruent melting. Here, we employ large-scale…

Materials Science · Physics 2025-10-30 Yu Xie , Menghang Wang , Senja Ramakers , Frans Spaepen , Boris Kozinsky

An ability of various interatomic potentials to reproduce the properties of silicene (2D silicon) polymorphs were examined. Structural and mechanical properties of the flat (FS), low-buckled (LBS), trigonal dumbbell (TDS), honeycomb…

Materials Science · Physics 2023-05-10 Marcin Maździarz

Phase change material (PCM) features distinct optical or electronic properties between amorphous and crystalline states. Recently, it starts to play a key role in the emerging photonic applications like optoelectronic display, dynamic…

Although (103) is a stable nominal orientation for both silicon and germanium, experimental observations revealed that in the case of silicon this surface remains disordered on an atomic scale even after careful annealing. We report here a…

Materials Science · Physics 2009-11-13 C. V. Ciobanu , F. C. Chuang , D. E. Lytle
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