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Related papers: Phonon-assisted Auger-Meitner Recombination in Sil…

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Photon sources are fundamental components for any quantum photonic technology. The ability to generate high count-rate and low-noise correlated photon pairs via spontaneous parametric down-conversion using bulk crystals has been the…

Automatic reconfiguration of optical filters is the key to novel flexible RF photonic receivers and Software Defined Radios (SDRs). Although silicon photonics (SiP) is a promising technology platform to realize such receivers, process…

Applied Physics · Physics 2022-07-05 Md Jubayer Shawon , Vishal Saxena

The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and…

We discuss the mechanism of coherent phonon generation by Stimulated Ionic Raman Scattering, a process different from conventional excitation with near visible optical pulses. Ionic Raman scattering is driven by anharmonic coupling between…

Superconductivity · Physics 2015-05-25 R. Mankowsky , M. Först , T. Loew , J. Porras , B. Keimer , A. Cavalleri

Motivated by the recent progress of phonon-mediated control in quantum spin devices, we propose a possibility of hybrid measurement using electron paramagnetic resonance (EPR) and a surface acoustic wave (SAW). Considering quadrupole-strain…

Strongly Correlated Electrons · Physics 2020-11-04 Mikito Koga , Masashige Matsumoto

We report on the first experimental evidence of guided resonances (GRs) in photonic crystal slabs based on aperiodically-ordered supercells. Using the Ammann-Beenker (quasiperiodic, 8-fold symmetric) tiling geometry, we present our study on…

Silicon indirect bandgap fundamentally limits its ability to emit light, hindering the development of silicon-based light sources. Here, we explore a conceptually new solution to this long-standing challenge. We demonstrate ultrabroadband…

Muons, as a bulk probe of materials, have been used to study the depth profile of charge carrier kinetics in Si wafers by scanning the muon implantation depth. The photoexcited muon spin spectroscopy technique can optically generate excess…

Materials Science · Physics 2021-07-07 K. Yokoyama , J. S. Lord , J. Miao , P. Murahari , A. J. Drew

Degenerate two-photon indirect absorption in silicon is an important limiting effect on the use of silicon structures for all-optical information processing at telecommunication wavelengths. We perform a full band structure calculation to…

Materials Science · Physics 2011-04-01 J. L. Cheng , J. Rioux , J. E. Sipe

We have developed a phonon calculation software based on the supercell finite displacement method: ARES-Phonon. It can perform phonon and related property calculations using either non-diagonal or diagonal supercell approaches. Particularly…

Materials Science · Physics 2025-03-17 Qian Wang , Jiaxiang Li , Yu Xie

Photons do not carry sufficient momentum to induce indirect optical transitions in semiconducting materials such as silicon, necessitating the assistance of lattice phonons to conserve momentum. Compared to direct bandgap semiconductors,…

A two-phonon system with lowest-order coupling of form $Q_RQ_{IR}^2$ is studied by perturbation method, and analytic results for both phonon displacements and frequencies are obtained. The frequency renormalization of infrared (IR) active…

Materials Science · Physics 2026-05-19 Yijie Zeng

Silicon nanocrystals are produced using a two-stage gold ion implantation technique. First stage implantation using low energy ions leads to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the…

Mesoscale and Nanoscale Physics · Physics 2014-03-26 Gayatri Sahu , Rajesh Kumar , D. P. Mahapatra

The most popular method of the broad-line region size estimation in active galactic nuclei (AGN) is the reverberation mapping based on measuring the time delay between the continuum flux and the flux in the emission lines. In our work, we…

Instrumentation and Methods for Astrophysics · Physics 2020-01-29 Eugene Malygin , Roman Uklein , Elena Shablovinskaya , Aleksander Perepelitsyn , Aleksandra Grokhovskaya

Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator…

Applied Physics · Physics 2018-09-20 Jun-Han Lin , Bo-Jun Huang , H. H. Cheng , Guo-En Chang

This study investigates the use of spiral geometry in superconducting resonators to achieve high intrinsic quality factors, crucial for applications in quantum computation and quantum sensing. We fabricated Archimedean Spiral Resonators…

Quantum Physics · Physics 2025-04-08 Yusuke Tominaga , Shotaro Shirai , Yuji Hishida , Hirotaka Terai , Atsushi Noguchi

We calculate the effective charge for multimagnon infrared (IR) absorption assisted by phonons in a perovskite like antiferromagnet and we compute the spectra for two magnon absorption using interacting spin-wave theory. The full set of…

Condensed Matter · Physics 2008-06-16 J. Lorenzana , G. A. Sawatzky

All-optical devices are essential for next generation ultrafast, ultralow-power and ultrahigh bandwidth information processing systems. Silicon microring resonators (SiMRR) provide a versatile platform for all-optical switching and…

Optics · Physics 2022-10-11 Aayushman Ghosh , Sayan Sarkar , Sukhdev Roy

Phonon localization is a phenomenon that influences numerous material properties in condensed matter physics. Anderson localization brings rise to localized atomic-scale phonon interferences in disordered lattices with an influence limited…

Mesoscale and Nanoscale Physics · Physics 2024-12-31 Albert Beardo , Paul Desmarchelier , Chia-Nien Tsai , Prajit Rawte , Konstantinos Termentzidis , Mahmoud I. Hussein

Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV,…

Mesoscale and Nanoscale Physics · Physics 2014-03-26 Rajesh Kumar , H. S. Mavi , A. K. Shukla
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