Related papers: Monolithic Integration of Embedded III-V Lasers on…
In this paper, we describe the development of monolithic pixel detectors by using a Silicon-on-Insulator (SOI) technology for X-ray and charged particle applications. The detectors are based on a 0.2 {\mu}m CMOS fully depleted SOI process…
Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate…
Integrated photonics has recently become a leading platform for the realization and processing of optical entangled quantum states in compact, robust and scalable chip formats with applications in long-distance quantum-secured…
Mid-infrared semiconductor lasers in photonic integrated circuits are of considerable interest for a variety of industrial, environmental, and medical applications. However, photonic integration technologies in the mid-infrared lag far…
Silicon photonic integrated circuit (PIC) builds on the demand for a low cost approach from established silicon-based manufacturing infrastructure traditionally built for electronics. Besides its natural abundance, silicon has desirable…
A fundamental component of an integrated quantum optical circuit is an on-chip beam-splitter operating at the single-photon level. Here we demonstrate the monolithic integration of an on-demand quantum emitter in the form of a single…
A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…
We report thin-film InAs/GaAs quantum dot (QD) solar cells with $n-i-p{+}$ deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-inch wafers. External quantum efficiency measurements demonstrate…
Ultra-low-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes, and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence…
III-V semiconductor nanowires are considered promising building blocks for advanced photonic devices. One of the key advantages is that the lattice mismatch can easily be accommodated in 1D structures, resulting in superior heteroepitaxial…
The photonics landscape encompasses a wide scope of material platforms, each optimized for specific functionalities, yet no platform meets the demands of all current and evolving photonic applications. While combining integrated photonics…
Molecular beam epitaxy allows for the monolithic integration of wavelength-flexible epitaxial infrared plasmonic materials with quantum-engineered infrared optoelectronic active regions. We experimentally demonstrate a six-fold enhancement…
Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of…
Hybrid SiN-QD microlasers coupled to a passive SiN output waveguide with 7{\mu}m diameter and record low threshold density of 27 {\mu}J cm-2 are demonstrated. A new design and unique processing scheme starting from SiN/QD/SiN stacks offer…
Many of the envisioned quantum photonic technologies, e.g. a quantum repeater, rely on an energy- (wavelength-) tunable source of polarization entangled photon pairs. The energy tunability is a fundamental requirement to perform…
In this work, we present the monolithic integration of GaAsP and GaInP islands, selectively grown on a CMOS-compatible Si nanotip wafer using gas-source molecular beam epitaxy via a nanoheteroepitaxy approach. These alloys span a wide…
We demonstrate a method to monolithically integrate nanowire-based quantum dot single photon sources on-chip using evanescent coupling. By deterministically placing an appropriately tapered III-V nanowire waveguide, containing a single…
We demonstrate the first monolithically integrated linear photonic crystal microcavities in an advanced SOI CMOS microelectronics process (IBM 45nm 12SOI) with no in-foundry process modifications. The cavities were integrated into a…
To date, high efficiency multijunction solar cells have been developed on Ge or GaAs substrates for space applications, and terrestrial applications are hampered by high fabrication costs. In order to reduce this cost, we propose a…
We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The axicon consists of circular gratings with seven stages of 1x2…