Related papers: High Power on-chip Integrated Laser
The existing silicon-carbide-on-insulator photonic platform utilizes a thin layer of silicon dioxide under silicon carbide to provide optical confinement and mode isolation. Here, we replace the underneath silicon dioxide layer with a…
Lasers that combine narrow linewidths with rapid tunability are critical for applications such as coherent optical ranging, distributed fiber-optic sensing, and precision spectroscopy. Despite significant progress in integrated laser…
Here we report the development of high-efficiency microscale GaAs laser power converters, and their successful transfer printing onto silicon substrates, presenting a unique, high power, low-cost and integrated power supply solution for…
Hybrid SiN-QD microlasers coupled to a passive SiN output waveguide with 7{\mu}m diameter and record low threshold density of 27 {\mu}J cm-2 are demonstrated. A new design and unique processing scheme starting from SiN/QD/SiN stacks offer…
The exponential growth of artificial intelligence (AI) workloads is driving an urgent demand for optical interconnects with ultrahigh bandwidth, energy efficiency, and scalability. Silicon photonics, with its CMOS compatibility and…
Silicon photonic integrated circuits offer significant improvements in processing bandwidth, power efficiency, and low latency, addressing the needs of future microwave communication systems. Several successful applications have been…
Silicon's inherently indirect bandgap severely limits its radiative efficiency, posing a fundamental challenge to the development of practical silicon-based light sources. While strategies such as nanoscale confinement of electrons and…
We report the development of a tunable, low-noise, all-fiber, single-frequency, linearly polarized high-power master oscillator power amplifier operating over 20 nm, from 1017 nm down to 997 nm. Using Ytterbium highly-doped silica fiber…
High-power amplifiers are of great importance in many optical systems deployed in optical sensing, ranging, medical surgery, material processing and more. Likewise, high-gain, low-noise amplifiers with low polarization dependence are…
By self-injection-locking a 1560 nm distributed feedback semiconductor laser to a high-$Q$ silicon nitride resonator, a high-coherence 780 nm second harmonic signal is generated via the photogalvanic-induced second-order nonlinearity. A…
Silicon nitride (SiN) has emerged as a promising platform for integrated nonlinear photonics because of its low propagation loss, wide transparency window, and CMOS compatibility. Nonlinear processes arising from photon-electron…
On-chip coherent laser sources are crucial for the future of photonic integrated circuits, yet progress has been hindered by the complex interplay between material quality, device geometry, and performance metrics. We combine…
Silicon photonics has attracted significant interest in recent years due to its potential in integrated photonics components (1,2) as well as all-dielectric meta-optics elements.(3) Strong photon-photon interactions, aka optical…
Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V…
Optical modulators are at the heart of optical communication links. Ideally, they should feature low insertion loss, low drive voltage, large modulation bandwidth, high linearity, compact footprint and low manufacturing cost. Unfortunately,…
High power fiber lasers operating at the 1.5micron wavelength region have attractive features like eye-safety and atmospheric transparency, and cascaded Raman fiber lasers offer a convenient method to obtain high power sources at these…
Integrated thin-film lithium niobate (TFLN) photonics has emerged as a promising platform for realization of high-performance chip-scale optical systems. Of particular importance are TFLN electro-optic modulators featuring high-linearity,…
Fiber lasers are widely used in various fields owing to their high efficiency, flexible transmission and excellent beam quality. In applications such as industrial manufacturing and defense systems, a higher output power is always desired.…
Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive…
The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has…