Related papers: Calculating the spin memory loss at Cu$|$metal int…
We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its…
Proximity-induced magnetization (PIM) has broad implications across interface-driven spintronics applications employing spin-currents. We directly determine the scaling between PIM in Pt and the temperature-dependent interface magnetization…
Despite intense efforts it has remained unresolved whether and how interfacial spin-orbit coupling (ISOC) affects spin transport across heavy metal (HM)/ferromagnet (FM) interfaces. Here we report conclusive experiment evidence that the…
An electrically conductive metal typically transmits or absorbs a spin current. Here, we report on evidence that interfacing two metal thin films can suppress spin transmission and absorption. We examine spin pumping in…
We measured spin transport in nonferromagnetic (NM) metallic multilayers from the contribution to damping due to spin pumping from a ferromagnetic Co90Fe10 thin film. The multilayer stack consisted of NM1/NM2/Co90Fe10(2 nm)/NM2/NM3 with…
We study spin transport in forward and reverse biased junctions between a ferromagnetic metal and a degenerate semiconductor with a delta-doped layer near the interface at relatively low temperatures. We show that spin polarization of…
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…
We performed non-local electrical measurements of a series of Py/Cu lateral spin valve devices with different Cu thicknesses. We show that both the spin diffusion length of Cu and the apparent spin polarization of Py increase with Cu…
Transport properties of magnetic multilayers in current perpendicular to the plane of the layers geometry are defined by diffusive scattering in the bulk of the layers, and diffusive and ballistic scattering across the interfaces. Due to…
Understanding the evolution of spin-orbit torque (SOT) with increasing heavy-metal thickness in ferromagnet/normal metal (FM/NM) bilayers is critical for the development of magnetic memory based on SOT. However, several experiments have…
We use quantum Monte Carlo to determine the magnetic and transport properties of coupled square lattice spin and fermionic planes as a model for a metal-insulator interface. Specifically, layers of Ising spins with an intra-layer exchange…
A scheme is presented to calculate on a first-principles level the spin-lattice coupling (SLC) parameters needed to perform combined molecular-spin dynamics (MSD) simulations. By treating changes to the spin configuration and atomic…
Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many…
A high reproducibility in the performance of cobalt/copper and permalloy/copper lateral spin valves with transparent contacts is obtained by optimizing the interface quality and the purity of copper. This allows us to study comprehensively…
We provide a transmission line representation for channels exhibiting spin-momentum locking (SML) which can be used for both time-dependent and steady-state transport analysis on a wide variety of materials with spin-orbit coupling such as…
Perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interactions are key interactions in modern spintronics. These interactions are thought to be dominated by the oxidation of the Co|Al interface in the archetypal…
We study spin-$S$ Ising models with $p$-spin interactions on the one-dimensional chain and the two-dimensional square lattice. Here, $S$ denotes the magnitude of the spin and $p$ represents the number of spins involved in each interaction.…
The exchange interaction between electrons and magnetic spins is considerably enhanced near interfaces, in magnetic multilayers. As a result, a dc current can be used to generate spin oscillations. We review theory and experimental…
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces…
We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability…