Related papers: Unidirectional Magnetoresistance in Antiferromagne…
Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, we reported UMR in antiferromagnetic insulator Fe2O3/Pt structure. The UMR has a…
Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic…
We report the observation of a unidirectional magnetoresistance (UMR) that originates from the nonequilibrium orbital momentum induced by an electric current in a naturally oxidized Cu/Co bilayer. The orbital-UMR scales with the torque…
Recent studies evidence the emergence of asymmetric electron transport in layered conductors owing to the interplay between electrical conductivity, magnetization, and the spin Hall or Rashba- Edelstein effects. Here, we investigate the…
Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal / ferromagnet (HM/FM) bilayer systems. We observe the USMR in the Pt/{\alpha}-Fe2O3 bilayers where the {\alpha}-Fe2O3 is an antiferromagnetic…
We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) in conducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer, which does $\textit{not}$ rely on the spin Hall effect in the normal metal…
Recent experiments have revealed nonlinear features of the magnetoresistance in metallic bilayers consisting of a heavy-metal (HM) and a ferromagnetic metal (FM). A small change in the lon- gitudinal resistance of the bilayer has been…
A large unidirectional magnetoresistance (UMR) ratio of UMR/$R_{xx}\sim$ $0.36\%$ is found in W/CoFeB metallic bilayer heterostructures at room temperature. Three different regimes in terms of the current dependence of UMR ratio are…
We predict unidirectional magnetoresistance effects arising in a bilayer composed of a nonmagnetic metal and a ferromagnetic insulator, whereby both longitudinal and transverse resistances vary when the direction of the applied electric…
Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall effects (SHEs) provides a facile means of probing in-plane magnetization to avoid complex magnetic tunnel junctions. However, the UMR signal is very weak…
The unidirectional magnetoresistance (UMR) is one of the most complex spin-dependent transport phenomena in ferromagnet/non-magnet bilayers, which involves spin injection and accumulation due to the spin Hall effect (SHE) or…
Magnetoresistance effects are crucial for understanding the charge/spin transport as well as propelling the advancement of spintronic applications. Here we report the coexistence of magnetic moment-dependent (MD) and magnetic field-driven…
Nanoscale bilayers containing at least one magnetic layer exhibit universal unusual anisotropic magnetoresistance (UAMR) and unidirectional magnetoresistance (UMR). They are currently understood through various mechanisms related to the…
Unidirectional magnetoresistance (UMR) in metallic bilayers arises from nonlinear spin-charge transport mediated by broken time-reversal and inversion symmetries, yet the role of magnons remains unsettled. We develop a theoretical framework…
Magnetoresistive effects are typically symmetric under magnetization reversal. However, nonlinear spin transport can give rise to unidirectional magnetoresistance in systems with strong spin-orbit interaction and broken inversion symmetry.…
Magnetoresistive effects are usually invariant upon inversion of the magnetization direction. In noncentrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied…
We report current-direction dependent or unidirectional magnetoresistance (UMR) in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$, that is several orders…
Both magnetism and spin-orbit coupling in systems with broken inversion symmetry lift the spin degeneracy of electronic bands, but the consequences of interplay between these mechanisms remain poorly understood. Here, we show that ultrathin…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven FMR technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, were analysed to determine the…