Related papers: Anderson localization crossover in 2D Si systems: …
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…
We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…
We study the metal-insulator transition in a tight-binding one-dimensional (1D) model with long-range correlated disorder. In the case of diagonal disorder with site energy within $[-\frac{W}{2},\frac{W}{2}]$ and having a power-law spectral…
Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candidate platform for quantum computing. The metal-to-insulator…
Several new aspects of the subtle interplay between electronic correlations and disorder are reviewed. First, the dynamical mean-field theory (DMFT)together with the geometrically averaged ("typical") local density of states is employed to…
We consider the change in electron localization due to the presence of electron-electron repulsion in the \HA model. Taking into account local Mott-Hubbard physics and static screening of the disorder potential, the system is mapped onto an…
We calculate the effective spatial dimension $d_\text{IR}$ of electron modes at critical points of 3D Anderson models in various universality classes (O,U,S,AIII). The results are equal within errors, and suggest the super-universal value…
The two-dimensional electron system formed at the interface between the insulating oxides LaAlO3 and SrTiO3 exhibits ferromagnetism, superconductivity, and a wide range of unique magnetotransport properties. A key challenge is to find a…
Incommensurate (IC) charge-order (CO) and spin density wave (SDW) order in electron doped SrMn1-xWxO3-{\delta} (x= 0.08 to 0.1875) have been studied using neutron diffraction.The study highlights the drastic effect of electron doping on the…
We realize experimentally a cold atom system equivalent to the 3D Anderson model of disordered solids where the anisotropy can be controlled by adjusting an experimentally accessible parameter. This allows us to study experimentally the…
The electronic structures of cerium-based ternary 122 compounds Ce$M_{2}$Si$_{2}$, where $M =$ Ru, Rh, Pd, and Ag, are investigated systematically by using the density functional theory in combination with the single-site dynamical…
We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…
In this paper we present a thorough study of transport, spectral and wave-function properties at the Anderson localization critical point in spatial dimensions $d = 3$, $4$, $5$, $6$. Our aim is to analyze the dimensional dependence and to…
The electronic and magnetic properties of many strongly-correlated systems are controlled by a limited number of states, located near the Fermi level and well isolated from the rest of the spectrum. This opens a formal way for combining the…
The critical behaviour of 3-dimensional disordered systems in a strong magnetic field is investigated by analysing the spectral fluctuations of the energy spectrum. The level spacing distribution $P(s)$ as well the Dyson-Mehta statistics…
Positive magnetoresistance (PMR) of a silicon MOSFET in parallel magnetic fields B has been measured at high electron densities n >> n_c where n_c is the critical density of the metal-insulator transition (MIT). It turns out that the…
The Mott and the Anderson routes to localization have long been recognized as the two basic processes that can drive the metal-insulator transition (MIT). Theories separately describing each of these mechanisms were discussed long ago, but…
The interplay of interactions and disorder is studied using the Anderson-Hubbard model within the typical medium dynamical cluster approximation. Treating the interacting, non-local cluster self-energy ($\Sigma_c[{\cal \tilde{G}}](i,j\neq…
We report on the results of molecular dynamics simulation (MD) studies of the classical two-dimensional electron crystal in the presence disorder. Our study is motivated by recent experiments on this system in modulation doped semiconductor…
We consider disordered ladders of the transverse-field Ising model and study their critical properties and entanglement entropy for varying width, $w \le 20$, by numerical application of the strong disorder renormalization group method. We…