Related papers: High-responsivity MoS$_2$ hot-electron telecom-ban…
One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate an ultrafast…
We demonstrate experimentally the realization and the characterization of a chip scale integrated photodetector for the visible and the near infrared spectral regime based on the integration of a MoSe2/WS2 heterojunction on top of a silicon…
Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by…
We report on the demonstration of MoS2/GaN UV-visible photodetectors with high spectral responsivity both in UV and in visible regions as well as the observation of MoS2 band-edge in spectral responsivity. Multi-layer MoS2 flakes of…
Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector…
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials…
Owing to its atomically thin thickness, layer-dependent tunable band gap, flexibility, and CMOS compatibility, MoS$_2$ is a promising candidate for photodetection. However, mono-layer MoS2-based photodetectors typically show poor…
Engineering nanoscale light matter interaction in mixed dimensional semiconductor heterostructures offers a pathway to mitigate the intrinsic gain bandwidth trade off in photodetectors. Here, we report a broadband, high responsivity 2D and…
We present a compact on-chip resonator enhanced silicon-MSM photodetector in $850$ $nm$ wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 $\mu m$ long device.…
A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to…
Strong light absorption, coupled with moderate carrier transport properties, makes two-dimensional (2-D) layered transition metal dichalcogenide (TMD) semiconductors promising candidates for low intensity photodetection applications.…
The strong light emission and absorption exhibited by single atomic layer transitional metal dichalcogenides in the visible to near-infrared wavelength range makes them attractive for optoelectronic applications. In this work, using…
Two-dimensional transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully explore their potential in photoconductive detectors, high…
Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for…
Due to its high carrier mobility, broadband absorption, and fast response time, graphene is attractive for optoelectronics and photodetection applications. However, the extraction of photoelectrons in conventional metal-graphene junction…
Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated…
Photodetectors based on two dimensional materials have attracted growing interest. However, the sensitivity is still unsatisfactory even under high gate voltage. Here we demonstrate a MoS2 photodetector with a poly(vinylidene…
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor…
Thermal tuning of the optical refractive index in the waveguides to control light phase accumulation is essential in photonic integrated systems and applications. In silicon photonics, microheaters are mainly realized by metal wires or…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…