Related papers: Single exciton trapping in an electrostatically de…
For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a long-standing goal. MoSe2-WSe2 heterostructures host spatially indirect interlayer excitons (IXs) which exhibit…
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum…
Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an…
Interlayer excitons (IXs) in hetero-bilayers of transition metal dichalcogenides (TMDs) represent an exciting emergent class of long-lived dipolar composite bosons in an atomically thin, near-ideal two-dimensional (2D) system. The…
With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition…
Transition metal dichalcogenide heterostructures can host interlayer excitons (IXs), which consist of electrons and holes spatially separated in different layers. IXs possess permanent dipoles and have proven to offer a wealth of novel…
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched…
Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their…
Recent studies on excitons in two-dimensional materials have been widely conducted for their potential usages for novel electronic and optical devices. Especially, sophisticated manipulation techniques of quantum degrees of freedom of…
Interlayer excitons (IXs) formed at the interface of atomically-thin semiconductors possess various novel properties. In a parallel development, nanoscale strain engineering has emerged as an effective means for creating 2D quantum light…
Vertically stacked van der Waals structures are promising platforms that enable layer engineering, opening new avenues for the quantum control of elementary excitations, including optically generated bound electron-hole pairs. Here we…
Monolayer C$_3$N is an emerging two-dimensional indirect band gap semiconductor with interesting mechanical, thermal, and electronic properties. In this work we present a description of C$_3$N electronic and dielectric properties, focusing…
We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane…
In condensed-matter physics, remarkable advances have been made with atomic systems by establishing a thorough control over cooling and trapping techniques. In semiconductors, this method may also provide a deterministic approach to reach…
Excitons -- bound electron-hole pairs -- play a central role in light-matter interaction phenomena, and are crucial for wide-ranging applications from light harvesting and generation to quantum information processing. A long-standing…
We consider the design of two-dimensional electrostatic traps for dipolar indirect excitons. We show that the excitons dipole-dipole interaction, combined with the in-plane electric fields that arise due to the trap geometry, constrain the…
The lateral magnetic confinement of quasi two-dimensional excitons into wire like structures is studied. Spin effects are take into account and two different magnetic field profiles are considered, which experimentally can be created by the…
Novel excitonic phenomena emerging in transition metal dichalcogenide (TMDC) heterostructures belong to the most exciting topics in contemporary physics of van der Waals materials. Interlayer excitons (IXs) stand out among those due to…
We report lasing of moir\'e trapped interlayer excitons (IXs) by integrating a pristine hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayer into a high-$Q$ ($>10^4$) nanophotonic cavity. We control the cavity-IX detuning using a magnetic field…
We study the interface exciton at lateral type II heterojunctions of monolayer transition metal dichalcogenides (TMDs), where the electron and hole prefer to stay at complementary sides of the junction. We find that the 1D interface exciton…