Related papers: Decoherence by Optical Phonons in GaN Defect Singl…
GaN defect based quantum emitters have recently gained attention as promising single photon sources for quantum information applications. However, dephasing processes, manifested as photoluminescence (PL) linewidth broadening, pose a…
We investigate temperature-dependent spectral properties of a single defect in hexagonal boron nitride (hBN). We observe a sharp zero-phonon line (ZPL) emission accompanied by Stokes and anti-Stokes optical phonon sidebands assisted by the…
We explore the effect of temperatures between 80 and 720 K on the energy and linewidth of zone-center transverse (TO) and longitudinal (LO) optical phonons in bulk gallium phosphide (GaP) using Fourier transform infrared ellipsometry from…
In this work, we analyze the relevance of excitation parameters on the emission from single-photon emitting defect centers in GaN. We investigate the absorption spectrum of different emitters by photoluminescence excitation technique at…
GaN defect-based quantum emitters show significant potential for quantum information technologies, yet their intrinsic nature is not fully understood. In this work, we present results on the temperature-dependent emission polarization of…
Optimized light-matter coupling in semiconductor nanostructures is a key to understand their optical properties and can be enabled by advanced fabrication techniques. Using in-situ electron beam lithography combined with a low-temperature…
We report a comprehensive Raman study of the phonon behaviour in PdSe$_2$ in the temperature range of 5 K to 300 K. A remarkable change in the Raman spectrum is observed at 120 K: a significant enhancement of the out-of-plane phonon…
Single-molecule photoluminescence (PL) spectroscopy of semiconductor nanocrystals (NCs) reveals the nature of exciton-phonon interactions in NCs. Understanding the narrow line shapes at low temperatures and the significant broadening as…
We report a photoluminescence study of high-quality Ge samples at temperatures 12 K $\leq$ T $\leq$ 295 K, over a spectral range that covers phonon-assisted emission from the indirect gap (between the lowest conduction band at the L point…
We present a Raman study of ZrAs_{2} single crystals, a nodal line semimetal with symmetry-enforced Dirac-like band crossings. We identified the symmetry of phonon modes by polarized light measurements and comparison with calculated phonon…
Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshape and their energy spacings from the zero…
We develop a general microscopic theory describing the phonon decoherence of quantum dots and indistinguishability of the emitted photons in photonic structures. The coherence is found to depend fundamentally on the dimensionality of the…
We report Raman spectra measurements on a MoS2 monolayer supported on SiO2 as a function of temperature. Unlike in previous studies, the positions of the two main Raman modes, E2g1 and A1g exhibited nonlinear temperature dependence.…
We investigate the temperature dependence of photon coherence properties through two photon interference (TPI) measurements from a single QD under resonant excitation. We show that the loss of indistinguishability is only related to the…
The photoluminescence spectra of band-edge transitions in GaN is studied as a function of temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy and the broadening of emission line…
We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from…
GeSn epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a judicious explanation for their temperature-dependent photoluminescence (PL) that is…
Anharmonic decay of coherent optical phonons in semimetal Sb has been investigated by using a femtosecond pump-probe technique. The coherent $A_{1g}$ mode is observed in time domain in a wide temperature range of 7 - 290 K. The decay rate…
The femtosecond optical pump-probe technique was used to study dynamics of photoexcited electrons and coherent optical phonons in transition metals Zn and Cd as a function of temperature and excitation level. The optical response in time…
We study the temperature-dependent dephasing rate of excitons in chains of chromophores, accounting for scattering on static disorder as well as acoustic phonons in the host matrix. From this we find a powerlaw temperature dependence of the…