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This paper summarizes the idea of Tiered-Latency DRAM (TL-DRAM), which was published in HPCA 2013, and examines the work's significance and future potential. The capacity and cost-per-bit of DRAM have historically scaled to satisfy the…

Since its inception, Rowhammer exploits have rapidly evolved into increasingly sophisticated threats compromising data integrity and the control flow integrity of victim processes. Nevertheless, it remains a challenge for an attacker to…

In-memory computing (IMC) can eliminate the data movement between processor and memory which is a barrier to the energy-efficiency and performance in Von-Neumann computing. Resistive RAM (RRAM) is one of the promising devices for IMC…

This paper summarizes the idea of ChargeCache, which was published in HPCA 2016 [51], and examines the work's significance and future potential. DRAM latency continues to be a critical bottleneck for system performance. In this work, we…

To mitigate the ever-worsening Power Wall problem, more and more applications need to expand their power supply to the wide-voltage range including the near-threshold region. However, the read delay distribution of the SRAM cells under the…

Raw bit errors are common in NAND flash memory and will increase in the future. These errors reduce flash reliability and limit the lifetime of a flash memory device. We aim to improve flash reliability with a multitude of low-cost…

DRAM-based main memory is used in nearly all computing systems as a major component. One way of overcoming the main memory bottleneck is to move computation near memory, a paradigm known as processing-in-memory (PiM). Recent PiM techniques…

DRAM manufacturers have been prioritizing memory capacity, yield, and bandwidth for years, while trying to keep the design complexity as simple as possible. DRAM chips do not carry out any computation or other important functions, such as…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising replacement for SRAM technology in large Last-Level Caches (LLCs). Despite its high-density, non-volatility, near-zero leakage power, and immunity to radiation as…

Predicting the minimum operating voltage ($V_{min}$) of chips stands as a crucial technique in enhancing the speed and reliability of manufacturing testing flow. However, existing $V_{min}$ prediction methods often overlook various sources…

Data recovery has long been a focus of the electronics industry for decades by security experts, focusing on hard disk recovery, a type of non-volatile memory. Unfortunately, none of the existing research, neither from academia, industry,…

Reliability has emerged as a key topic of interest for researchers around the world to detect and/or mitigate the side effects of decreasing transistor sizes, such as soft errors. Traditional solutions, like DMR and TMR, incur significant…

The morphological evolution of the conducting filament (CF) predominantly controls the electric response of the resistive random access memory (ReRAM) devices. However, the parameters -- in terms of the material and the processing -- which…

Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…

Frequency hopping (FH) is an effective anti-jamming technology in cognitive radio networks (CRNs). However, it is difficult to significantly increase the anti-jamming results because of the growing crowded spectrum in wireless…

Vilamb provides efficient asynchronous systemredundancy for direct access (DAX) non-volatile memory (NVM) storage. Production storage deployments often use system-redundancy in form of page checksums and cross-page parity. State-of-the-art…

Safety prompts constitute an interpretable layer of defense against jailbreak attacks in vision-language models (VLMs); however, their efficacy is constrained by the models' latent structural responsiveness. We observe that such prompts…

The SVOM Visible Telescope (VT) is critical for the rapid identification of gamma-ray burst (GRB) optical counterparts, particularly for high-redshift candidates that require immediate infrared spectroscopic follow-up. To address the…

Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive applications, and SRAM technology scaling and leakage power limits the efficiency of embedded memories. Future on-chip storage will need higher density…

To improve power efficiency, researchers are experimenting with dynamically adjusting the supply voltage of systems below the nominal operating points. However, production systems are typically not allowed to function on voltage settings…