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Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical…
We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a…
Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of…
The interplay between ion beam modification techniques in the MeV range and the controlled generation of negatively charged nitrogen-vacancy (NV-) centers in nitrogen-doped synthetic diamond crystals is explored. An experimental approach…
Split-vacancy color centers in diamond are promising solid state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low energy ion implantation and subsequent thermal…
Treatment of lab-grown diamond by electron irradiation and annealing has enabled quantum sensors based on negatively-charged nitrogen-vacancy (NV$^\text{-}$) centers to demonstrate record sensitivities.…
The sharp optical resonances of NV- centers in diamond at cryogenic temperatures offer powerful new capabilities for material characterization, but extracting the most detailed information typically requires careful calibration of…
Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel…
Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation…
We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with…
We investigate the magnetic field dependent photo-physics of individual Nitrogen-Vacancy (NV) color centers in diamond under cryogenic conditions. At distinct magnetic fields, we observe significant reductions in the NV photoluminescence…
Color centers in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication…
The split silicon-vacancy defect (SiV) in diamond is an electrically and optically active color center. Recently, it has been shown that this color center is bright and can be detected at the single defect level. In addition, the SiV defect…
The nitrogen-vacancy centre (NV) has drawn much attention for over a decade, yet detailed knowledge of the photophysics needs to be established. Under typical conditions, the NV can have two stable charge states, negative (NV-) or neutral…
In this work, we explore the ability of plasma assisted chemical vapor deposition (PACVD) operating under high power densities to produce thin high-quality diamond layers with a controlled doping with negatively-charged nitrogen-vacancy…
As a point defect with unique spin and optical properties, nitrogen-vacancy (NV) center in diamond has attracted much attention in the fields of quantum sensing, quantum simulation, and quantum networks. The optical properties of an NV…
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak…
Although chemical vapor deposition (CVD) is one of the preferred routes to synthetic diamond crystals, a full knowledge of the point defects produced during growth is still incomplete. Here we exploit the charge and spin properties of…
We report on measurements of the photoluminescence (PL) properties of single nitrogen-vacancy (NV) centers in diamond at temperatures between 4-300 K. We observe a strong reduction of the PL intensity and spin contrast between ca. 10-100 K…
Knowledge of the nitrogen-vacancy center formation kinetics in diamond is critical to engineering sensors and quantum information devices based on this defect. Here we utilize the longitudinal tracking of single NV centers to elucidate NV…