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Grain boundaries (GBs) are defects originating in multi-crystalline silicon during crystal growth for device Si solar cell fabrication. The presence of GBs changes the coordination of Si, making it advantageous for charge carriers to…

Materials Science · Physics 2022-01-20 Rita Maji , Julia Contreras-García , Nathalie Capron , Elena Degoli , Eleonora Luppi

The control of solute segregation at grain boundaries (GBs) is essential in engineering alloy properties, however the structure-activity relationship of the key parameter-the segregation energies-still remains elusive. Here we propose the…

Materials Science · Physics 2022-10-20 Xin Li , Wang Gao , Qing Jiang

This study delves into the complex mechanisms of defect production and accumulation in nanocrystalline tungsten under irradiation, with a particular focus on the interplay between grain boundaries and free surfaces. Through molecular…

Materials Science · Physics 2024-03-20 Yang Zhang , Predrag Krstic , Jason R. Trelewicz

We extend the phase-field approach to model the solidification of faceted materials. Our approach consists of using an approximate gamma-plot with rounded cusps that can approach arbitrarily closely the true gamma-plot with sharp cusps that…

Materials Science · Physics 2009-11-10 Jean-Marc Debierre , Alain Karma , Franck Celestini , Rahma Guerin

Large-area two-dimensional (2D) materials for technical applications can now be produced by chemical vapor deposition (CVD). Unfortunately, grain boundaries (GBs) are ubiquitously introduced as a result of the coalescence of grains with…

Accurate modeling of polycrystalline microstructure evolution under strong crystallographic heterogeneities remains a major challenge for full-field numerical methods at the mesoscopic scale. In this work, we present a high-fidelity…

Materials Science · Physics 2026-03-13 Tianchi Li , Marc Bernacki

We present the results of atomistic and ab initio simulation of several different tilt grain boundaries (GB) in silicon. The boundary structures obtained with genetic algorithm turned out to have no coordination defects, i.e. all silicon…

Materials Science · Physics 2016-11-03 Vitaly Yu. Lazebnykh , Andrey S. Mysovsky

Grain boundaries dramatically affect the properties of polycrystalline materials because of differences in atomic configuration. To fully understand the relationship between grain boundaries and materials properties, systematic studies of…

Materials Science · Physics 2021-01-19 Shin Kiyohara , Tomohiro Miyata , Teruyasu Mizoguchi

Characterizing microstructural effects on the dynamical response of materials is challenging due to the extreme conditions and the short timescales involved. For example, little is known about how grain boundary characteristics affect spall…

Materials Science · Physics 2025-11-17 Chunyu Li , Alejandro Strachan

We present an original approach for predicting the static recrystallization texture development during annealing of deformed crystalline materials. The microstructure is considered as a population of subgrains and grains whose sizes and…

Materials Science · Physics 2021-02-22 Arthur Després , Jean-Denis Mithieux , Chad. W. Sinclair

Through an integrated macroscale/mesoscale computational model, we investigate the developing shape and grain morphology during the melting and solidification of a weld. In addition to macroscale surface tension driven fluid flow and heat…

Solute segregation along grain boundaries (GBs) profoundly affects their thermodynamic and kinetic behaviors in polycrystalline materials. Recently, the spectral approach has emerged as a powerful tool to predict GB segregation. However,…

Materials Science · Physics 2025-05-27 Zuoyong Zhang , Chuang Deng

We have revealed the decisive role of grain-boundary-induced strain fields in electron scattering in polycrystalline graphene. To this end, we have formulated the model based on Boltzmann transport theory which properly takes into account…

Materials Science · Physics 2022-05-24 S. E. Krasavin , V. A. Osipov

Recent progress in large-area synthesis of monolayer molybdenum disulfide, a new two-dimensional direct-bandgap semiconductor, is paving the way for applications in atomically thin electronics. Little is known, however, about the…

We have observed boundaries between hcp $^4$He crystal grains in equilibrium with liquid $^4$He. We have found that, when emerging at the liquid-solid interface, a grain boundary makes a groove whose dihedral angle $2\theta$ is non-zero.…

Other Condensed Matter · Physics 2009-11-13 S. Sasaki , F. Caupin , S. Balibar

Grain growth fundamentally shapes the microstructure of crystalline materials upon annealing, affecting their overall mechanical and functional properties. Recently, it has been rationalized that grain growth in polycrystals does not result…

Despite the large number of experiments demonstrating that grains in a metallic material can grow at room temperature due to applied mechanical load, the mechanisms and the driving forces responsible for mechanically induced grain…

Materials Science · Physics 2019-04-08 Oleksandr Glushko , Gerhard Dehm

We study numerically and analytically the coarsening of stripe phases in two spatial dimensions, and show that transient configurations do not achieve long ranged orientational order but rather evolve into glassy configurations with very…

Statistical Mechanics · Physics 2009-11-07 Denis Boyer , Jorge Viñals

Particle coarsening and grain growth take place to minimize the total interfacial energy. The classical mean-field treatments by Lifshitz, Slyozov, [1] Wagner [2] and Hillert [3] predicted cubic growth law under bulk-diffusion controlled…

Materials Science · Physics 2017-08-24 Yanhao Dong , Jian Han

A systematic investigation has been performed to optimize the microstructure of $\mathrm{L1_0-FePt-SiO_x}$ granular thin film as recording media for heat-assisted magnetic recording. The FePt-BN nucleation layer, which is stable even at…

Materials Science · Physics 2023-03-22 Chengchao Xu , Bing Zhou , Tianxiang Du , B. S. D. Ch. S Varaprasad , David E. Laughlin , JianGang , Zhu