Related papers: Strain-induced magnetization control in an oxide m…
Magnetoelectric multiferroics promise direct cross-control between coexisting ferroelectric and ferromagnetic orders, which is of interest for applications in magnetism and spintronics. A particularly interesting type of cross-control is…
Electric-field induced magnetization switching in multiferroic magnetoelectric devices is promising for beyond Moore's law computing. We show here that interface-coupled multiferroic heterostructures, i.e., a ferroelectric layer coupled…
Based on density functional theory (DFT) calculations including an on-site Hubbard $U$ term we investigate the effect of substrate-induced strain on the properties of ferrimagnetic Fe$_2$O$_3$-FeTiO$_3$ solid solutions and heterostructures.…
Electric field control of the magnetic state in ferrimagnets holds great promise for developing spintronic devices due to low power consumption. Here, we demonstrate a non-volatile reversal of perpendicular net magnetization in a…
Mechanical strain can be used to control physical properties in materials. The experimental investigation of strain-induced effects at the nanoscale is of importance not only for its fundamental aspects, but also for the development of…
The spin Hall magnetoresistance (SMR) of epitaxial BiFeO$_3$ thin films is investigated. SMR consistent with ferromagnetic interfacial states for BiFeO$_3$ films fabricated on (001) SrTiO$_3$ (R' BFO) and LaAlO$_3$ (T' BFO) substrates is…
Much attention has been given recently to flexible and wearable integrated-electronic devices, with a strong emphasis on real-time sensing, computing and communication technologies. Thin ferroelectric films exhibit switchable polarization…
Epitaxial strain in transition-metal oxides can induce dramatic changes in electronic and magnetic properties. A recent study on the epitaxially strained SrCoO$_3$ thin films revealed persistent ferromagnetism even across a metal-insulator…
We have observed photocarrier transport behaviors in BiFeO$_3$/La$_{1-x}$Sr$_x$MnO$_3$~(BFO/LSMO) heterostructures by using time-resolved synchrotron x-ray magnetic circular dichroism in reflectivity. The magnetization of LSMO layers was…
Spintronics exploits the magnetoresistance effects to store or sense the magnetic information. Since the magnetoresistance strictly depends on the magnetic anisotropy of the system, it is fundamental to set a defined anisotropy to the…
We present an optically induced remanent photostriction in BiFeO3, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO3/Ni structure. The 75% change in coercivity in the Ni film is…
The magnetic-field-dependent spin ordering of strained BiFeO3 films is determined using nuclear resonant scattering and Raman spectroscopy. The critical field required to destroy the cycloidal modulation of the Fe spins is found to be…
Magnetometry, x-ray, and neutron scattering have been used to study the structural and magnetic properties of a TbMnO3 thin film grown on a [001] SrTiO3 substrate by pulsed laser deposition. Although bulk TbMnO3 is a low temperature…
We investigated the magnetic transitions in BiFeO$_3$ at low temperature (5-300 K) and observed nearly 90$^o$ rotation of magnetic domains (imaged by vertical magnetic force microscopy) across 150 K in an epitaxial thin film of thickness…
Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is…
The influence of an external static magnetic field (up to 480 mT)on the structural properties of EuTiO$_3$ (ETO) polycrystalline samples was examined by powder XRD at the Elettra synchrotron facilities in the temperature range 100-300K.…
Materials with a coexistence of magnetic and ferroelectric order (i.e., multiferroics) provide an efficient route for the control of magnetism by electric fields. Unfortunately, a long-sought room temperature multiferroic with strongly…
Magnetoelectric multiferroics in which ferroelectricity and magnetism coexist have attracted extensive attention because they provide great opportunities for the mutual control of electric polarization by magnetic fields and magnetization…
Atomically engineered oxide heterostructures provide a fertile ground for creating novel states. For example, a two-dimensional electron gas at the interface between two oxide insulators, giant thermoelectric Seebeck coefficient, emergent…
The coupling between ferroelectric and magnetic orders in multiferroic materials and the nature of magnetoelectric (ME) effects are enduring experimental challenges. In this work, we have studied the response of magnetization to…