Related papers: Phase transitions in ferroelectric domain walls
The interaction of ferroelectric 180 degree domain wall with a strongly inhomogeneous electric field of biased Scanning Probe Microscope tip is analyzed within continuous Landau-Ginzburg-Devonshire theory. Equilibrium shape of the initially…
We calculate the exact analytical solution to the domain wall properties in a multiferroic system with two order parameters that are coupled bi-quadratically. This is then adapted to the case of a magnetoelectric multiferroic material such…
Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent…
In this paper we describe domain walls appearing in a thin, nematic liquid crystal sample subject to an external field with intensity close to the Fr\'eedericksz transition threshold. Using the gradient theory of the phase transition…
Phase field modeling of domain structures in ferroelectrics nanorods of different shape and sizes is presented. The vortex domain configurations in confined ferroelectrics have been explored by varying the ratio of the energies of…
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…
A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls…
A simulation study for the magnetization process is performed for the multi-domain state in a chiral p-wave superconductor, using the time-dependent Ginzburg-Landau theory. The external field penetrates inside as core-less vortices through…
Simultaneous imaging of the piezoresponse phase, amplitude and bare surface topography of displacive ferroelectric thin films by scanning probe microscopy directly shows the nature of domain wall pinning and its relation to morphological…
Understanding the dynamic behavior of the domain structure is critical to the design and application of super-elastic freestanding ferroelectric thin films. The phase-field simulation is currently a powerful tool for observing, exploring,…
We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase…
Ultra-dense domain walls are increasingly important for many devices but their microscopic properties are so far not fully understood. Here we use molecular dynamic simulations to study the domain wall stability in the prototypical…
Prediction of properties from composition is a fundamental goal of materials science and can greatly accelerate development of functional materials. It is particularly relevant for ferroelectric perovskite solid solutions where…
Ferroelectrics are widely used for a broad array of technological applications due to their attractive electrical and electromechanical properties. In order to obtain large functional properties, material compositions are often designed to…
A phenomenological treatment of domain walls based on the Ginzburg-Landau-Devonshire theory is developed for uniaxial, trigonal ferroelectrics lithium niobate and lithium tantalate. The contributions to the domain wall energy from…
The ferromagnetic phase of Co$_3$Sn$_2$S$_2$ is widely considered to be a topological Weyl semimetal, with evidence for momentum-space monopoles of Berry curvature from transport and spectroscopic probes. As the bandstructure is highly…
Many ferroelastic crystals display at sufficiently low measurement frequencies a huge elastic softening below Tc which is caused by domain wall motion. Materials range from perovskites to iron based superconductors and shape memory…
Ferroelectric $\mathrm{HfO}_2$ has attracted extensive research interest for its applications in AI era. The domain walls play a crucial role in phase structure stabilization and polarization switching of ferroelectric $\mathrm{HfO}_2$,…
We investigate theoretically the polarization switching kinetics in ferroelectric thin films. In such substances, the domain walls are pinned by (usually dipole) defects, which are present also in ordered samples as technologically…
The structure of 180-degree uncharged rotational domain wall in a multiaxial ferroelectric film is studied within the framework of analytical Landau-Ginzburg-Devonshire (LGD) approach. The Finite Element Modelling (FEM) is used to solve…