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Related papers: Interfacial properties of 2D WS2 on SiO2 substrate…

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A predicted type-II staggered band alignment with an approximately $1.4 eV$ valence band offset at the $ZnGeN_2/GaN$ heterointerface has inspired novel band-engineered $III-N/ZnGeN_2$ heterostructure-based device designs for applications in…

Multilayer van der Waals (vdWs) heterostructures assembled by diverse atomically thin layers have demonstrated a wide range of fascinating phenomena and novel applications. Understanding the interlayer coupling and its correlation effect is…

Mesoscale and Nanoscale Physics · Physics 2017-06-26 Liang Xu , Wei-Qing Huang , Wangyu Hu , Bing-Xin Zhou , Anlian Pan , Gui-Fang Huang

The electronic structure of an atomic-layer-deposited MoS2 monolayer on SiO2 was investigated using X-ray absorption spectroscopy (XAS) and synchrotron X-ray photoelectron spectroscopy (XPS). The angle-dependent evolution of the XAS spectra…

The interlayer bonding in two dimensional materials is particularly important because it is not only related to their physical and chemical stability but also affects their mechanical, thermal, electronic, optical, and other properties. To…

The environment contributes to the screening of Coulomb interactions in two-dimensional semiconductors. This can potentially be exploited to tailor material properties as well as for sensing applications. Here, we investigate the tuning of…

Mesoscale and Nanoscale Physics · Physics 2023-05-26 David Tebbe , Marc Schütte , Kenji Watanabe , Takashi Taniguchi , Christoph Stampfer , Bernd Beschoten , Lutz Waldecker

We investigate energetic and electronic properties of TiS2 , an archetypal van der Waals (vdW) material, from first principles, in the framework of the Density Functional Theory (DFT). In this system a recent experimental study showed a…

Materials Science · Physics 2020-11-26 Ricci Matteo , Ambrosetti Alberto , Silvestrelli Pier Luigi

SrHfO3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. SrHfO3/GaAs interface has attracted attention due to its unique properties. In this paper, the interface properties of (001) SrHfO3/GaAs are investigated…

Materials Science · Physics 2018-02-14 Li-Bin Shi , Xiao-Ming Xiu , Xu-Yang Liu , Kai-Cheng Zhang , Chun-Ran Li , Hai-Kuan Dong

Room temperature ferromagnetism is observed in undoped TiO2 films deposited on Si substrates using pulsed laser deposition (PLD). The ferromagnetic properties of the samples depend on the oxygen partial pressure during the PLD synthesis.…

Materials Science · Physics 2009-11-13 Abdul K Rumaiz , Bakhtyar Ali , Abdullah Ceylan , M. Boggs , T. Beebe , S. Ismat Shah

Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed…

We report a systematic study of the weak chemical bond between two benzene molecules. We first show that it is possible to obtain a very good description of the C_2 dimer and the benzene molecule, by using pseudopotentials for the…

Other Condensed Matter · Physics 2009-11-13 Sandro Sorella , Michele Casula , Dario Rocca

In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show…

Interfacial adhesion between graphene and a SiO2 substrate is studied by density functional theory (DFT) with dispersion corrections. The results demonstrate the van der Waals (vdW) interaction as the predominate mechanism for the…

Materials Science · Physics 2015-06-19 Wei Gao , Penghao Xiao , Graeme Henkelman , Kenneth M. Liechti , Rui Huang

Thin organic films and two-dimensional (2D) molecular assemblies on solid surfaces yield the potential for applications in molecular electronics, optoelectronics, catalysis, and sensing. These applications rely on the intrinsic electronic…

Recent experimental synthesis of two-dimensional (2D) heterostructures opens a door to new opportunities in tailoring the electronic properties for novel 2D devices. Here, we show that a wide range of lateral 2D heterostructures could have…

Computational Physics · Physics 2016-12-30 Junfeng Zhang , Weiyu Xie , Jijun Zhao , Shengbai Zhang

Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…

Strongly Correlated Electrons · Physics 2016-09-21 Tobias Peterseim , Martin Dressel , Marc Dietrich , Angelika Polity

Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these…

A quasiparticle band structure of a single layer 2H-NbSe$_2$ is reported by using first-principles $GW$ calculation. We show that a self-energy correction increases the width of a partially occupied band and alters its Fermi surface shape…

Mesoscale and Nanoscale Physics · Physics 2017-10-25 Sejoong Kim , Young-Woo Son

Two-dimensional (2D) surface of the topological materials is an attractive channel for the electrical conduction reflecting the linearly-dispersive electronic bands. By applying a reliable systematic thickness t dependent measurement of…

Lateral heterostructures of 2D transition metal dichalcogenide offer a powerful platform to investigate photonic and electronic phenomena at atomically sharp interfaces. However, their controlled engineering, including tuning lateral domain…

The interlayer coupling is emerging as a new parameter for tuning the physical properties of two-dimensional (2D) van der Waals materials. When two identical semiconductor monolayers are stacked with a twist angle, the periodic interlayer…

Mesoscale and Nanoscale Physics · Physics 2022-09-16 Jing Liang , Dongyang Yang , Jingda Wu , Jerry I Dadap , Kenji Watanabe , Takashi Taniguchi , Ziliang Ye
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