Related papers: Gate-defined electron interferometer in bilayer gr…
We define a mesoscopic ring in a 2-dimensional electron gas (2DEG) interrupted by two tunnel barriers, enabling us to apply a well-defined potential difference between the two halves of the ring. The electron interference in the ring is…
Ballistic, gate-defined devices in two-dimensional materials offer a platform for electron optics phenomena influenced by the material's properties and gate control. We study the ray trajectory dynamics of all-electronic, gate-defined…
Using the self-consistent Hartree-Fock approximation, we study the compressibility instability of the interacting electrons in bilayer graphene. The chemical potential and the compressibility of the electrons can be significantly altered by…
Quantum interference in nano-electronic devices could lead to reduced-energy computing and efficient thermoelectric energy harvesting. When devices are shrunk down to the molecular level it is still unclear to what extent electron…
Injection of mode-filtered electrons into a phase-sensitive four-terminal waveguide Aharonov-Bohm (AB) ring is studied. An individually tuneable quantum point contact (QPC) in a waveguide lead of the GaAs/AlGaAs-ring allows to selectively…
Gravitational waves at kilohertz and higher frequencies offer a unique probe of the early Universe at temperatures well beyond the reach of the cosmic microwave background, corresponding to energy scales $\gtrsim 10^9$GeV. Existing detector…
We present a statistical readout method for quantum interferences based on time series analysis of consecutive single electron transfers through a double quantum dot Aharonov-Bohm interferometer. Waiting time distributions qualitatively…
The interference gating is a novel method for robust time-resolved electron holographic measurements by directly switching the interference. Here, a new arrangement is presented in which a biprism in the condenser aperture as a fast…
Using extensive tight-binding calculations, we investigate (including the spin) the Aharonov-Bohm (AB) effect in monolayer and bilayer trigonal and hexagonal graphene rings with zigzag boundary conditions. Unlike the previous literature, we…
We discuss an electronic interferometer recently measured by Yamamoto et al. This "flying quantum bit" experiment showed quantum oscillations between electronic trajectories of two tunnel-coupled wires connected via an Aharanov-Bohm ring.…
We report experiments on electron interferometer devices in the quantum Hall regime, where edge channels circle a 2D electron island. The main confinement is produced by etch trenches, into which front gate metal is deposited. We find a…
We use spin-density-functional theory within an envelope function approach to calculate electronic states in a GaAs/InAs core-shell nanowire pierced by an axial magnetic field. Our fully 3D quantum modeling includes explicitly the…
We present low-temperature transport experiments on Aharonov-Bohm (AB) rings fabricated from two-dimensional hole gases in p-type GaAs/AlGaAs heterostructures. Highly visible h/e (up to 15%) and h/2e oscillations, present for different gate…
Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…
We analyze the magnetic field and gate voltage dependence of the longitudinal resistance in an integer quantum Hall Fabry-P\'{e}rot interferometer, taking into account the interactions between an interfering edge mode, a non-interfering…
AA-stacked bilayer graphene supports Fermi circles in its bonding and antibonding bands which coincide exactly, leading to symmetry-breaking in the presence of electron-electron interactions. We analyze a continuum model of this system in…
Aharonov-Bohm (AB) interference is reported for the first time in the conductance of a vertical nanostructure based on a single GaAs/AlGaAs quantum well (QW). The two lowest subbands of the well are spatially separated by the Hartree…
We have explored phase coherent transport of holes in two p-type GaAs quantum rings with orbital radii 420 nm and 160 nm fabricated with AFM oxidation lithography. Highly visible Aharonov-Bohm (AB) oscillations are measured in both rings,…
We have studied the dielectric screening of electric field which is induced by a gate voltage in twisted double bilayer graphene by using a sample with a mismatch angle of about 5 degrees. In low temperature magnetotransport measurements,…
We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular…