Related papers: Coupling Spin Defects in Hexagonal Boron Nitride t…
Hexagonal boron nitride (hBN) is attracting a lot of attention in the last years, thanks to its many remarkable properties. These include the presence of single-photon emitters with superior optical properties, which make it an ideal…
Quantum networks and sensing require solid-state spin-photon interfaces that combine single-photon generation and long-lived spin coherence with scalable device integration, ideally at ambient conditions. Despite rapid progress reported…
Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission in the ultraviolet and strong exciton-phonon coupling. Luminescence experiments performed on the recently synthesized monolayer form (m-hBN)…
Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been…
Creation of defect with predetermined optical, chemical and other characteristics is a powerful tool to enhance the functionalities of materials. Herewith, we utilize density functional theory to understand the microscopic mechanisms of…
Negatively charged boron vacancies ($\mathrm{V_B^-}$) in hexagonal boron nitride (hBN) are emerging as promising solid-state spin qubits due to their optical accessibility, structural simplicity, and compatibility with photonic platforms.…
Point defect quantum bits in semiconductors have the potential to revolutionize sensing at atomic scales. Currently, vacancy related defects, such as the NV center in diamond and the VB$^-$ in hexagonal boron nitride (hBN), are at the…
Atomically thin hexagonal boron nitride (h-BN), especially monolayer, has garnered increasing attention due to its intriguing optical and light-matter-interaction properties. However, its intrinsic optical properties and electronic band…
Hexagonal boron nitride (hBN) has recently gained attention as a solid state host of quantum emitters. However, hBN emitters reported to date lack the properties needed for their deployment in scalable quantum technologies. Here we employ…
We report a study of using the same material to fabricate a whispering gallery mode resonator and a coupler. Coupling to high Q whispering gallery modes of the lithium niobate resonator is demonstrated by means of the titanium-doped…
Bulk hexagonal boron nitride (hBN) is a highly nonlinear natural hyperbolic material that attracts major attention in modern nanophotonics applications. However, studies of its optical properties in the visible part of the spectrum and…
Optical microresonators have recently attracted a growing attention in the photonics community. Their applications range from quantum electro-dynamics to sensors and filtering devices for optical telecommunication systems, where they are…
Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter, are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in…
The ground-state spin of optically active defects in hexagonal boron nitride (hBN) offers a promising platform for quantum information applications, such as qubits for quantum computing and nanoscale sensing. A key characteristic of a qubit…
Close inspection of the pre-edge in oxygen near-edge x-ray absorption fine structure spectra of single step, gas phase synthesized titanium oxynitride photocatalysts with 20 nm particle size reveals an additional eg resonance in the VB that…
We present an ab initio computational approach for the calculation of resonant Raman intensities, including both excitonic and non-adiabatic effects. Our diagrammatic approach, which we apply to two prototype, semiconducting layered…
Crystal defects in hexagonal boron nitride (hBN) are emerging as versatile nanoscale optical probes with a wide application profile, spanning the fields of nanophotonics, biosensing, bioimaging and quantum information processing. However,…
The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…
Single photon emitters in hexagonal boron nitride have gathered a lot of attention due to their favourable emission properties and the manifold of possible applications. Despite extensive scientific effort, the exact atomic origin of these…
Correlated materials with competing spin-orbit and crystal-field interactions can host composite spin-orbital magnons that are highly susceptible to structural and electronic perturbations, enabling the control of magnetic dynamics beyond…