Related papers: Interfacial resistive switching by multiphase pola…
Ion concentration polarization (CP, current-induced concentration gradient adjacent to a charge-selective interface) has been well studied for single-phase mixed conductors (e.g., liquid electrolyte), but multiphase CP has been rarely…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…
Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal…
Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…
Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the…
Introducing foreign ions, atoms, or molecules into emerging functional materials is crucial for manipulating material physical properties and innovating device applications. The intercalation of emerging new materials can induce multiple…
K-ion intercalation in Prussian blue analogs (PBAs) is a well-established charge storage mechanism in potassium-ion batteries; here, we demonstrate that this same ion intercalation process is the basis for nanoscale resistive switching…
We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO3 (LHO) thin films for non-volatile resistive random access memory (RRAM) applications. Nonpolar resistive switching (RS) was achieved in PtLHOPt memory…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…
Two-dimensional (2D) materials are suitable hosts for the intercalation of extrinsic guest ions such as Li+, Na+ and K+ as the interlayer coupling is weak. This allows ion intercalation engineering of 2D materials, which may be a key to…
We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing…
High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emergent Internet of Things (IOT) arena. Here, we…