Related papers: DEPFET Active Pixel Sensors
DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full…
The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key…
DEPleted Field Effect Transistor (DEPFET) active pixel detectors combine a first amplification stage with a fully depleted sensor in one single device, resulting in a very good signal-to-noise ratio even for thin sensors. DEPFET pixels are…
We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix…
Field effect transistors embedded into a depleted silicon bulk (DEPFETs) can be used as the first amplifying element for the detection of small signal charges deposited in the bulk by ionizing particles, X-ray photons or visible light. Very…
Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…
Ensuring end-to-end security in image sensors has become essential as visual data can be exposed through multiple stages of the imaging pipeline. Advanced protection requires encryption to occur before pixel values appear on any readout…
In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low…
The Wide Field Imager for the Athena X-ray telescope is composed of two back side illuminated detectors using DEPFET sensors operated in rolling shutter readout mode: A large detector array featuring four sensors with 512x512 pixels each…
Highly granular pixel detectors allow for increasingly precise measurements of charged particle tracks. Next-generation detectors require that pixel sizes will be further reduced, leading to unprecedented data rates exceeding those foreseen…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…
Silicon pixel detectors produced according to the ATLAS Pixel Detector design were tested in a beam at CERN in the framework of the ATLAS collaboration. The detectors used n+/n sensors with oxygenated silicon substrates. The experimental…
The European X-ray Free Electron Laser (XFEL.EU) will provide every 0.1 s a train of 2700 spatially coherent ultrashort X-ray pulses at 4.5 MHz repetition rate. The Small Quantum Systems (SQS) instrument and the Spectroscopy and Coherent…
DEPFET active pixel sensors are a well-developed technology for vertex detectors at future colliders. Extensive test beam campaigns have proven the excellent performance of these devices, and their radiation hardness has been thoroughly…
Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the…
Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a…
Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is…
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $\mu$m) in which charge is collected on an electrode, albeit by disordered and slow…
A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation…
A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$\mu$m. To solidify this concept, the…