Related papers: Large Hall electron mobilities in head-to-head BaT…
For several decades now, ultra-high-mobility GaAs two-dimensional electron systems (2DESs) have served as the hallmark platform for various branches of research in condensed matter physics. Fundamental to this long-standing history of…
Degenerate conduction-band minima, or `valleys', in materials such as Si, AlAs, graphene, and MoS$_2$ allow them to host two-dimensional electron systems (2DESs) that can access a valley degree of freedom. These multivalley 2DESs present…
In this letter, we report on the theoretical investigations of electron mobility in practically viable designs of InxGa1-xN channel high electron mobility transistors (HEMT). Carriers in such devices are expected to exhibit a higher…
We study the effect of the domain wall on electronic transport properties in wire of ferromagnetic 3$d$ transition metals based on the linear response theory. We considered the exchange interaction between the conduction electron and the…
Monolayer transition metal dichalcogenides are recently emerged 2D electronic systems with various novel properties, such as spin-valley locking, circular dichroism, valley Hall effects, Ising superconductivity. The reduced dimensionality…
We analyze the electromechanical response of the 180 degree ferroelectric domain wall in tetragonal PbTiO3 by combining first-principles calculations with a Landau-Ginzburg-Devonshire (LGD) description. Using regular multidomain structures…
Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic…
Magnetic topological semimetals exhibit emerging magneto-transport behaviors, such as the giant anomalous Hall effect (AHE), chiral Hall effect, and antisymmetric magnetoresistance. In this work, based on the magnetic Weyl semimetal…
The charged domain walls in ferroelectric materials exhibit intriguing physical properties. We examine herein the charged-domain-wall structures in Ca$_{3-x}$Sr$_x$Ti$_2$O$_7$ using transmission electron microscopy. When viewed along the…
The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can in principle be…
Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport…
SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been…
Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the…
Herein, we reported giant tunability of the physical properties of 2DEGs at the spinel/perovskite interface of {\gamma}-Al2O3/SrTiO3 (GAO/STO). By modulating the carrier density thus the band filling with ionic-liquid gating, the system…
Ferroelectricity in atomically thin bilayer structures has been recently predicted1 and measured[2-4] in two-dimensional (2D) materials with hexagonal non-centrosymmetric unit-cells. Interestingly, the crystal symmetry translates lateral…
We report the realization of near total Faraday rotation of $\theta_F$=1.43 rad (82 degrees) on a single pass through a 2D electron gas (2DEG), approaching the ideal limit of $\pi/2$ rad (90 degrees). The corresponding Verdet constant V =…
Ferroelectric domain wall conductivity (DWC) is an intriguing functional property, that can be controlled through external stimuli such as electric and mechanical fields. Optical-field control, as a non-invasive flexible handle, has rarely…
Strontium titanate (SrTiO$_3$), famously described by Nobel laureate K. A. M\"uller as the "drosophila of solid-state physics", has been extensively investigated over the last seventy five years for its intricate coupling of structural,…
We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have…
In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility ({\mu}H) exceeding 100 cm2/Vs at room temperature (RT). It is found that the deposition of top hafnium oxide…