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Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review the recent results on the Raman spectroscopy and imaging of graphene. Raman spectroscopy and…

Materials Science · Physics 2008-10-17 Zhen hua Ni , Ying ying Wang , Ting Yu , Ze xiang Shen

We evaluate the optical reflectivity for a uniaxially strained graphene single layer between a SiO2 substrate and air. A tight binding model for the band dispersion of graphene is employed. As a function of the strain modulus and direction,…

Mesoscale and Nanoscale Physics · Physics 2010-01-04 F. M. D. Pellegrino , G. G. N. Angilella , R. Pucci

Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface…

We present a first-principles analysis of the strain renormalization of the cation diffusivity on the GaAs(001) surface. For the example of In/GaAs(001)-c(4x4) it is shown that the binding of In is increased when the substrate lattice is…

Materials Science · Physics 2009-11-07 Evgeni Penev , Peter Kratzer , Matthias Scheffler

We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we observe that strain can generate a bulk…

Materials Science · Physics 2009-07-15 Vitor M. Pereira , A. H. Castro Neto , N. M. R. Peres

The thermodynamics of solid/liquid interfaces under nanoconfinement has tremendous implications for liquid transport properties. Here using molecular dynamics, we investigate graphite nanoslits and study how the water/graphite interfacial…

Fluid Dynamics · Physics 2022-05-17 Zixuan Wei , Mara Chiricotto , Joshua D. Elliott , Fausto Martelli , Paola Carbone

The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the…

Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered Sn $(1\times1)$ structure on the SiC surface with quasi-freestanding graphene on top. While the electronic properties of the individual layers have been…

Controllable synthesis of defect-free graphene is crucial for applications since the properties of graphene are highly sensitive to any deviations from the crystalline lattice. We focus here on the emerging use of liquid Cu catalysts, which…

We analyze the electrostatic interactions between a single graphene layer and a SiO$_2$ susbtrate, and other materials which may exist in its environment. We obtain that the leading effects arise from the polar modes at the SiO$_2$ surface,…

Materials Science · Physics 2009-11-13 J. Sabio , C. Seoanez , S. Fratini , F. Guinea , A. H. Castro Neto , F. Sols

We employ tip-enhanced infrared near-field microscopy to study the plasmonic properties of epitaxial quasi-free-standing monolayer graphene on silicon carbide. The near-field images reveal propagating graphene plasmons, as well as a strong…

We study the stability of various kinds of graphene samples under soft X-ray irradiation. Our results show that in single layer exfoliated graphene (a closer analogue to two dimensional material), the in-plane carbon-carbon bonds are…

Materials Science · Physics 2015-05-14 S. Y. Zhou , C. O. Girit , A. Scholl , C. J. Jozwiak , D. A. Siegel , P. Yu , J. T. Robinson , F. Wang , A. Zettl , A. Lanzara

This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible…

We show using scanning tunneling microscopy, spectroscopy, and ab initio calculations that several intercalation structures exist for Na in epitaxial graphene on SiC(0001). Intercalation takes place at room temperature and Na electron-dopes…

Mesoscale and Nanoscale Physics · Physics 2011-12-01 Andreas Sandin , Thushari Jayasekera , J. E. , Rowe , Ki Wook Kim , M. Buongiorno Nardelli , Daniel B. Dougherty

Graphene, a flat monolayer of carbon atoms packed tightly into a two dimensional hexagonal lattice, has unusual electronic properties which have many promising nanoelectronic applications. Recent Low Energy Electron Microscopy (LEEM)…

Materials Science · Physics 2016-02-05 J H Lloyd-Williams

Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic…

The distribution of ions and their impact on the structure of electrolyte interfaces plays an important role in many applications. Interestingly, recent experimental studies have suggested the preferential accumulation of $SO_4^{2-}$ ions…

Chemical Physics · Physics 2026-05-11 Ademola Soyemi , Tibor Szilvasi

We report an unexpected mechanism by which an epitaxial interface can form between materials having strongly mismatched lattice constants. A simple model is proposed in which one material tilts out of the interface plane to create a…

Materials Science · Physics 2012-08-10 Steven C. Erwin , Cunxu Gao , Claudia Roder , Jonas Lähnemann , Oliver Brandt

Nonlinear optical processes rely on the intrinsically weak interactions between photons enabled by their coupling with matter. Unfortunately, many applications in nonlinear optics are severely hindered by the small response of conventional…

Materials Science · Physics 2014-12-15 Joel D. Cox , F. J. Garcia de Abajo

A clean, flat and orientation-identified graphene on a substrate is in high demand for graphene electronics. In this study, the hetero-epitaxial graphene growth on Cu(111)/mica(001) by chemical vapor deposition is investigated to check the…

Materials Science · Physics 2015-10-08 J. L. Qi , K. Nagashio , T. Nishimura , A. Toriumi