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Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and…
Topological defects, such as domain walls and vortices, have long fascinated physicists. A novel twist is added in quantum systems like the B-phase of superfluid helium He$_3$, where vortices are associated with low energy excitations in…
The lattice strain and domain switching behaviour was investigated as a function of cyclic field and grain orientation for a pseudorhombohedral composition of the high Curie point piezoelectric system xBiScO3 - (1-x)PbTiO3 (x = 0.40) by…
Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an…
Realizing effective manipulation and explicit identification of topological spin textures are two crucial ingredients to make them as information carrier in spintronic devices with high storage density, high data handling speed and low…
Using first principles calculations, we study the microscopic origin of ferroelectricity (FE) induced by magnetic order in the orthorhombic HoMnO3. We obtain the largest ferroelectric polarization observed in the whole class of improper…
Hysteretic switching of domain states is a salient character of all ferroic materials and the foundation for their multifunctional applications. Ferro-rotational order is emerging as a new type of ferroic order featuring structural…
We have analyzed the morphology of ferroelectric domains in very thin films of multiferroic BiFeO3. Unlike the more common stripe domains observed in thicker films BiFeO3 or in other ferroics, the domains tend not to be straight, but…
Controlling the polarization switching in the ferroelectric nanocrystals, nanowires and nanodots has an inherent specificity related to the emergence of depolarization field that is associated with the spontaneous polarization. This field…
In the micro- and nanoscale ferroelectric samples, the formation and the growth of domains are the usual stages of the polarization switching mechanism. By assuming the weak polarization anisotropy and by solving the…
We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which…
Domain boundaries in ferroelectric materials exhibit rich and diverse physical properties distinct from their parent materials and have been proposed for novel applications in nanoelectronics and quantum information technology. Due to their…
Ferroelectrics form domain patterns that minimize their energy subject to imposed boundary conditions. In a linear, constrained theory, that neglects domain wall energy, periodic domain patterns in the form of multi-rank laminates can be…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…
Using density functional theory calculations, ultrathin films of SrVO3(d1) and SrCrO3(d2) on SrTiO3 substrates have been studied as possible multiferroics. Although both are metallic in the bulk limit, they are found to be insulating as a…
Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain BaTiO3 thin film by an above-bandgap ultrafast optical…
Charge manipulation and fabrication of stable domain patterns in ferroelectric materials by scanning probe microscopy open up broad avenues for the development of tunable electronics. Harnessing the polarization energy and electrostatic…
A strong coupling between electric polarization and elastic deformation in solids is an important factor in creating useful electromechanical nanodevices. Such coupling is typically allowed in insulating materials with inversion symmetry…
Recently discovered materials called three-dimensional topological insulators constitute examples of symmetry protected topological states in the absence of applied magnetic fields and cryogenic temperatures. A hallmark characteristic of…
Recent observations of topological spin textures brought spintronics one step closer to new magnetic memories. Nevertheless, the existence of Skyrmions, as well as their stabilization, require very specific intrinsic magnetic properties…