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Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding…

Materials Science · Physics 2017-01-12 Meng Ye , David Vanderbilt

The notion of topology in physical systems is associated with the existence of a nonlocal ordering that is insensitive to a large class of perturbations. This brings robustness to the behaviour of the system and can serve as a ground for…

Quantum Gases · Physics 2022-06-08 Marco Di Liberto , Andreas Kruckenhauser , Peter Zoller , Mikhail A. Baranov

Using machine learning methods, we explore different types of domain walls in the recently unveiled single-element ferroelectric, the bismuth monolayer [Nature 617, 67 (2023)]. Remarkably, our investigation reveals that the charged domain…

Materials Science · Physics 2026-03-04 Wei Luo , Yang Zhong , Hongyu Yu , Muting Xie , Yingwei Chen , Hongjun Xiang , Laurent Bellaiche

Couplings between ferroelectric and magnetic orders offer promising routes toward low-dissipation electronics. However, such couplings are notably rare, largely due to the poor compatibility between insulating band structures and…

Materials Science · Physics 2026-03-20 Jan Priessnitz , Anna Birk Hellenes , Riccardo Comin , Libor Šmejkal

Polar skyrmions are topologically stable, swirling polarization textures with particle-like characteristics, which hold promise for next-generation, nanoscale logic and memory. While understanding of how to create ordered polar skyrmion…

Ferroelectric materials embedded with dielectric inclusions offer a unique platform for exploring novel topological polar textures. Using first-principles-based atomistic simulations, we investigate the polarization behavior of a BaTiO$_3$…

Materials Science · Physics 2026-03-12 R. Machado , F. Di Rino , M. Sepliarsky , M. G. Stachiotti

The discovery of topological semimetals with multifold band crossings has opened up a new and exciting frontier in the field of topological physics. These materials exhibit large Chern numbers, leading to long double Fermi arcs on their…

While electrical compatibility constraints normally prevent head-to-head (HH) and tail-to-tail (TT) domain walls from forming in ferroelectric materials, we propose that such domain walls could be stabilized by intentional growth of atomic…

Materials Science · Physics 2009-12-17 Xifan Wu , David Vanderbilt

Recent advances in moire engineering provide new pathways for manipulating lattice distortions and electronic properties in low-dimensional materials. Here, we demonstrate that twisted stacking can induce dipolar vortices in metallic SrRuO3…

Ferroelectric crystals must adopt one of the 10 polar point groups according to the Neumann's principle. In this paper we propose that this conclusion is based on perfect bulk crystals without taking the boundaries into account, and we show…

Materials Science · Physics 2024-07-01 Yuxuan Sheng , Menghao Wu

Antiferromagnetic skyrmion crystals are magnetic phases predicted to exist in antiferromagnets with Dzyaloshinskii-Moriya interactions. Their spatially periodic noncollinear magnetic texture gives rise to topological bulk magnon bands…

Mesoscale and Nanoscale Physics · Physics 2019-05-14 Sebastian A. Diaz , Jelena Klinovaja , Daniel Loss

Charge-neutral 180$^\circ$ domain walls that separate domains of antiparallel polarization directions are common structural topological defects in ferroelectrics. In normal ferroelectrics, charged 180$^\circ$ domain walls running…

Materials Science · Physics 2017-06-07 Shi Liu , R. E. Cohen

In numerous functional materials, such as steels, ferroelectrics and magnets, new functionalities can be achieved through the engineering of the domain structures, which are associated with the ordering of certain parameters within the…

Materials Science · Physics 2017-03-10 Fei-Ting Huang , Sang-Wook Cheong

Since the discovery of polar topological textures, achieving efficient control and manipulation of them has emerged as a significant challenge for their integration into nanoelectronic devices. In this study, we use second principles…

Materials Science · Physics 2025-08-01 Fernando Gómez-Ortiz , Louis Bastogne , He Xu , Philippe Ghosez

Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From the structural perspective, polarization reversal is…

Ferroelastic materials (materials with switchable spontaneous strain) often are centrosymmetric, but their domain walls are always polar, as their internal strain gradients cause polarization via flexoelectricity. This polarization is…

Materials Science · Physics 2025-03-11 Guangming Lu , Gustau Catalan , Ekhard K. H. Salje

Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in…

Topological surface states are a class of novel electronic states that are of potential interest in quantum computing or spintronic applications. Unlike conventional two-dimensional electron states, these surface states are expected to be…

Mesoscale and Nanoscale Physics · Physics 2010-07-16 Jungpil Seo , Pedram Roushan , Haim Beidenkopf , Y. S. Hor , R. J. Cava , Ali Yazdani

Skyrmions, merons, bimerons, and skyrmionic hopfions are quasiparticles which have stable topological textures. They have been observed across multiple physical domains including nucleons, water waves, magnetic materials, electromagnetic…

Optics · Physics 2025-02-18 Srinivasa Rao Allam , Yuto Yoneda , Takashige Omatsu

Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an…

Strongly Correlated Electrons · Physics 2012-09-25 K. Rogdakis , J. W. Seo , Z. Viskadourakis , Y. Wang , L. F. N. Ah Qune , E. Choi , J. D. Burton , E. Y. Tsymbal , J. Lee , C. Panagopoulos
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