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Several emerging non-volatile (NV) memory technologies are rising as interesting alternatives to build the Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but write operations…

The increased memory demands of workloads is putting high pressure on Last Level Caches (LLCs). Unfortunately, there is limited opportunity to increase the capacity of LLCs due to the area and power requirements of the underlying SRAM…

The increasing use of Non-Volatile Memory (NVM) in computer architecture has brought about new challenges, one of which is the write endurance problem. Frequent writes to a particular cache cell in NVM can lead to degradation of the memory…

SRAM-based cache memory faces several scalability limitations in deep nanoscale technologies, e.g., high leakage current, low cell stability, and low density. Emerging Non-Volatile Memory (NVM) technologies have received lots of attention…

In recent years, researchers have explored use of non-volatile devices such as STT-RAM (spin torque transfer RAM) for designing on-chip caches, since they provide high density and consume low leakage power. A common limitation of all…

In order to meet the needs of high performance computing (HPC) in terms of large memory, high throughput and energy savings, the non-volatile memory (NVM) has been widely studied due to its salient features of high density, near-zero…

Non-volatile memory (NVM) is a class of promising scalable memory technologies that can potentially offer higher capacity than DRAM at the same cost point. Unfortunately, the access latency and energy of NVM is often higher than those of…

Variable length coding for Non-Volatile Memory (NVM) technologies is a promising method to improve memory capacity and system performance through compressing memory blocks. However, compression techniques used to improve capacity or…

PCM is a popular backing memory for DRAM main memory in tiered memory systems. PCM has asymmetric access energy; writes dominate reads. MLC asymmetry can vary by an order of magnitude. Many schemes have been developed to take advantage of…

The emergence of high-density byte-addressable non-volatile memory (NVM) is promising to accelerate data- and compute-intensive applications. Current NVM technologies have lower performance than DRAM and, thus, are often paired with DRAM in…

Last-Level Cache (LLC) represents the bulk of a modern CPU processor's transistor budget and is essential for application performance as LLC enables fast access to data in contrast to much slower main memory. However, applications with…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

Battery-less technology evolved to replace battery technology. Non-volatile memory (NVM) based processors were explored to store the program state during a power failure. The energy stored in a capacitor is used for a backup during a power…

Byte-addressable non-volatile memory (NVM) features high density, DRAM comparable performance, and persistence. These characteristics position NVM as a promising new tier in the memory hierarchy. Nevertheless, NVM has asymmetric read and…

With technology scaling, the size of cache systems in chip-multiprocessors (CMPs) has been dramatically increased to efficiently store and manipulate a large amount of data in future applications and decrease the gap between cores and…

Several emerging technologies for byte-addressable non-volatile memory (NVM) have been considered to replace DRAM as the main memory in computer systems during the last years. The disadvantage of a lower write endurance, compared to DRAM,…

Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…

The advent of non-volatile memory (NVM) technologies like PCM, STT, memristors and Fe-RAM is believed to enhance the system performance by getting rid of the traditional memory hierarchy by reducing the gap between memory and storage. This…

Modern NVMM is closing the gap between DRAM and persistent storage, both in terms of performance and features. Having both byte addressability and persistence on the same device gives NVMM an unprecedented set of features, leading to the…

Phase change memory (PCM) has recently emerged as a promising technology to meet the fast growing demand for large capacity memory in computer systems, replacing DRAM that is impeded by physical limitations. Multi-level cell (MLC) PCM…