Related papers: Valley hydrodynamics in gapped graphene
Discovery of electron hydrodynamics in graphene system has opened a new scope of analytic calculations in condensed matter physics, which was traditionally well cultivated in science and engineering as a non-relativistic hydrodynamics and…
For over a hundred years, electron transport in conductive materials has been primarily described by the Drude model, which assumes that current flow is impeded primarily by momentum-relaxing collisions between electrons and extrinsic…
Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here we show that reflection from a…
We develop a theory of Coulomb interaction-related contribution to the photogalvanic current of the carriers of charge in two-dimensional non-centrosymmetric Dirac materials possessing a nontrivial structure of valleys and exposed to an…
We demonstrate valley-dependent vortex generation in a photonic graphene. Without breaking the inversion symmetry, excitation of two equivalent valleys leads to formation of an optical vortex upon Bragg-reflection to the third valley, with…
In absence of time-reversal symmetry, viscous electron flow hosts a number of interesting phenomena, of which we focus here on the Hall viscosity. Taking a step beyond the hydrodynamic definition of the Hall viscosity, we derive a…
We develop the theory of collective modes supported by a Fermi liquid of electrons in pristine graphene. Under reasonable assumptions regarding the electron-electron interaction, all the modes but the plasmon are over-damped. In addition to…
Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is however topologically trivial, because a valley-independent gap is energetically…
Two-dimensional electron systems offer an appealing platform to explore long-lived excitations arising due to collinear carrier scattering enabled by phase-space constraints at the Fermi surface. Recently it was found that these effects can…
Collective motions of electrons in solids are often conveniently described as the movements of quasiparticles. Here we show that these quasiparticles can be hierarchical. Examples are valley electrons, which move in hyperorbits within a…
The valley degree of freedom in 2D materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration,…
At low temperatures, in very clean two-dimensional (2D) samples the electron mean free path for collisions with static defects and phonons becomes greater than the sample width. Under this condition, the electron transport occurs by…
Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can…
We propose a scheme to trap and filter electrons, valley dependently, on a scale beyond the diffraction limit, in a gapped Dirac system using a circularly polarized light beam and a microscale metallic resonator. The main mechanism allowing…
In this paper we review, and extend to the non-isothermal case, some results concerning the application of the maximum entropy closure technique to the derivation of hydrodynamic equations for particles with spin-orbit interaction and…
The valley degree of freedom in layered transition-metal dichalcogenides (MX2) provides the opportunity to extend functionalities of novel spintronics and valleytronics devices. Due to spin splitting induced by spin-orbital coupling (SOC),…
The low energy band structure of graphene has two inequivalent valleys at K and K' points of the Brillouin zone. The possibility to manipulate this valley degree of freedom defines the field of valleytronics, the valley analogue of…
Quantum transport calculations describing electron scattering off an extended line defect in graphene are presented. The calculations include potentials from local magnetic moments recently predicted to exist on sites adjacent to the line…
Conventional electronics are based invariably on the intrinsic degrees of freedom of an electron, namely, its charge and spin. The exploration of novel electronic degrees of freedom has important implications in both basic quantum physics…
Diffusion currents are theoretically examined in two-dimensional Dirac materials, such as those of the transition metal dichalcogenides (TMD) family. The transversal effects are analogues of the valley Hall (VHE) and photogalvanic (PGE)…