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III V semiconductor nanowire based photodetectors have significant potential for remote sensing and LiDAR applications, particularly due to their ability to operate at 1.55 {\mu}m. Achieving room temperature operation and near unity…
Utilizing atomistic lattice dynamics and scattering theory, we study thermal transport in nanodevices made of 10 nm thick silicon nanowires, from 10 to 100 nm long, sandwiched between two bulk reservoirs. We find that thermal transport in…
Efficient ab initio computational methods for the calculation of thermoelectric transport properties of materials are of great avail for energy harvesting technologies. The BoltzTraP code has been largely used to efficiently calculate…
Semiconducting diode with nonreciprocal transport effect underlies the cornerstone of contemporary integrated circuits (ICs) technology. Due to isotropic superconducting properties and the lack of breaking of inversion symmetry for…
We present a novel approach for computing the surface roughness-limited thermal conductivity of silicon nanowires with diameter D < 100 nm. A frequency-dependent phonon scattering rate is computed from perturbation theory and related to a…
A device that achieves controllable rotation of the state of polarization by rotating the orientation of the eigenmodes of a waveguide by 45$^{\circ}$ is introduced and analyzed. The device can be implemented using lossless materials on a…
Due to its low bandgap and high optical efficiency, tellurium is considered an important material candidate for mid-infrared applications. Taking advantage of its structural anisotropy, we fabricated tellurium nanowire devices and…
We study arrays of parallel doped semiconductor nanowires in a temperature range where the electrons propagate through the nanowires by phonon assisted hops between localized states. By solving the Random Resistor Network problem, we…
Conducting nanowires possess remarkable physical properties unattainable in bulk materials. However our understanding of their transport properties is limited by the difficulty of connecting them electrically. In this Letter we investigate…
Two approaches (micro- and macro- investigations) are used to determine the dimension dependences of the optical parameters of the nanometer-scale layers of materials. It is shown that both an index of refraction and coefficient of…
The polarization-sensitive propagation in the anisotropic metamaterial (AMM) with double-sheeted hyperboloid dispersion relation is investigated from a purely wave propagation point of view. We show that TE and TM polarized waves present…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
We study perspectives of nanowire metamaterials for negative-refraction waveguides, high-performance polarizers, and polarization-sensitive biosensors. We demonstrate that the behavior of these composites is strongly influenced by the…
Featured with a plethora of electric and magnetic Mie resonances, high index dielectric nanostructures offer a versatile platform to concentrate light-matter interactions at the nanoscale. By integrating unique features of far-field…
We have employed noise thermometry for investigations of thermal relaxation between the electrons and the substrate in nanowires patterned from 40-nm-thick titanium film on top of silicon wafers covered by a native oxide. By controlling the…
Realizing tunable functional materials with built-in nanoscale heat flow directionality represents a significant challenge that could advance thermal management strategies. Here we use spatiotemporally-resolved thermoreflectance to…
Nanowire lasers can be monolithically and site-selectively integrated onto silicon photonic circuits. To assess their full potential for ultrafast opto-electronic devices, a detailed understanding of their lasing dynamics is crucial.…
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and…
The thermal conductivity of silicon nanowires (SiNWs) is investigated by molecular dynamics (MD) simulation. It is found that the thermal conductivity of SiNWs can be reduced exponentially by isotopic defects at room temperature. The…
Metasurfaces exploit the ability to engineer the optical phase, amplitude and polarization at subwavelength dimensions providing unprecedented control of light. The realization of the all dielectric approach to metasurfaces has led to the…