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Coherent caloritronics, the thermal counterpart of coherent electronics, has drawn growing attention since the discovery of heat interference in 2012. Thermal interferometers, diodes, transistors and nano-valves have been theoretically…
The spin Seebeck effect refers to the generation of a spin voltage caused by a temperature gradient in a ferromagnet, which enables the thermal injection of spin currents from the ferromagnet into an attached nonmagnetic metal over a…
Interface-induced superconductivity has recently been achieved by stacking a magnetic topological insulator layer on an antiferromagnetic FeTe layer. However, the mechanism driving this emergent superconductivity remains unclear. Here, we…
PtSe$_2$ ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms…
The amplitude of the Hall response of electrons can be understood without invoking interactions. Most theories of the phonon thermal Hall effect have likewise opted for a non-interacting picture. Here, we challenge this approach. Our study…
The semiconductiong ${\alpha'}$-borophene nanoribbon (${\alpha'}$-BNR) due to its incredible properties such as high stability and great mobility of carriers demostrates high-efficiency in thermoelectric devices. These properties enable us…
Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid…
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…
To construct reliable material platforms and to uncover new rules to realize spin-Seebeck effect (SSE) and thermal spin-filtering effect (SFE) are core topics in spin caloritronics. Here we design several single-layer boron-nitrogen…
Ulta-wide bandgap semiconductors based on $\beta$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most…
Semiconductor emitter can possibly achieve sharp cutoff wavelength due to its intrinsic bandgap absorption and almost zero sub-bandgap emission without doping. A germanium wafer based selective emitter with front-side antireflection and…
Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1)…
Silicon-Germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to eletro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving…
The observation that the thermal conductivity of single-crystalline silicon nanowires with diameter on the length scale of 25 nm is lower than that of bulk material by two orders of magnitude has attracted the interest onto silicon as a…
Functional materials such as magnetic, thermoelectric, and battery materials have been revolutionized through nanostructure engineering. However, spin caloritronics, an advancing field based on spintronics and thermoelectrics with…
The discoveries of two-dimensional ferromagnetism and magnetic semiconductors highly enrich the magnetic material family for constructing spin-based electronic devices but with an acknowledged challenge that the Curie temperature (Tc) is…
Numerous studies have reported performance enhancement of a thermophotovoltaic (TPV) system when an emitter is separated by nanoscale gaps from a TPV cell. Although a $p$-$n$-junction-based TPV cell has been widely used for the near-field…
Engineering materials to include nanoscale porosity or other nanoscale structures has become a well-established strategy for enhancing the thermoelectric performance of dielectrics. However, the approach is only considered beneficial for…
We theoretically investigate the thermoelectric properties of semiconducting (gapped) materials by varying the degrees of polynomials in their energy dispersion relations, in which either the valence or conduction energy dispersion depends…
Thin-film-like high temperature superconducting Bi2Sr2CaCu2O8+x single crystals (TSB) with a typical thickness of 20-200 nm is produced by mechanical exfoliation. The TSB, which shows excellent superconductivity, can adhere firmly to the…