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A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of…

A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…

Two-dimensional Dirac physics has aroused great interests in condensed matter physics ever since the discovery of graphene and topological insulators due to its importance in both fundamental physics and device applications. The ability to…

Charge-based field-effect transistors (FETs) greatly suffer from unavoidable carrier scattering and heat dissipation. In analogy to valley degree of freedom in semiconductors, chiral anomaly current in Weyl/Dirac semimetals is theoretically…

The exciting discovery of bi-dimensional systems in condensed matter physics has triggered the search of their photonic analogues. In this letter, we describe a general scheme to reproduce some of the systems ruled by a tight-binding…

We revisited the influence of electron-electron scattering on the resistivity of a two-dimensional system with linear spectrum. In conventional systems with parabolic spectrum, where Umklapp scattering is either prohibited or ineffective…

A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the…

We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus…

We calculate the long-wavelength static screening properties of both neutral and doped graphene in the framework of density-functional theory. We use a plane-wave approach with periodic images in the third dimension and truncate the Coulomb…

We study the Quantum Electrodynamics of 2D and 3D Dirac semimetals by means of a self-consistent resolution of the Schwinger-Dyson equations, aiming to obtain the respective phase diagrams in terms of the relative strength of the Coulomb…

We study the electronic states of graphene in piecewise constant potentials using the continuum Dirac equation appropriate at low energies, and a transfer matrix method. For superlattice potentials, we identify patterns of induced Dirac…

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

We calculate the mode-dependent transmission probability of massless Dirac fermions through an ideal strip of graphene (length L, width W, no impurities or defects), to obtain the conductance and shot noise as a function of Fermi energy. We…

Two-dimensional (2D) layered materials are promising for replacing Si to overcome the scaling limit of recent ~5 nm-length metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the insulator/2D channel interface severely…

The doping of lighter non-metals like boron and nitrogen into graphene represents a promising advancement in the field of nano-electronic devices, particularly in the development of field-effect transistors (FETs). These doped…

The discovery of two-dimensional (2D) materials possessing switchable spontaneous polarization with atomic thickness opens up exciting opportunities to realize ultrathin, high-density electronic devices with potential applications ranging…

Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency…

Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are…

Graphene is famous for being a host of 2D Dirac fermions. However, spin-orbit coupling introduces a small gap, so that graphene is formally a quantum spin hall insulator. Here we present symmetry-protected 2D Dirac semimetals, which feature…

Graphene Field-Effect Transistors (GFETs) are increasingly employed as biochemical sensors due to their exceptional electronic properties, surface sensitivity, and potential for miniaturization. A critical challenge in deploying GFETs is…