Related papers: Pinning Fault Mode Modeling for DWM Shifting
Amorphous solids are known to fail catastrophically via fracture, wherein cavitation at nano-metric scales is known to play a significant role. Micro-alloying via inclusions is often used as a means to increase the fracture toughness of…
The magnetostatic interaction between magnetic domain walls (DWs) in adjacent nanotracks has been shown to produce strong inter-DW coupling and mutual pinning. In this paper, we have used electrical measurements of adjacent spin-valve…
The critical behavior of charge-density waves (CDWs) in the pinned phase is studied for applied fields increasing toward the threshold field, using recently developed renormalization group techniques and simulations of automaton models.…
Surfaces and structures capable of multiple stable configurations have attracted growing interest for on-demand shape morphing. In this work, we consider an elastic compliant plate coupled to a two-dimensional foundation comprising an array…
We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron…
We report on an astonishing switching synchronization phenomenon in one-dimensional memristive networks, which occurs when several memristive systems with different switching constants are switched from the high to low resistance state. Our…
We explore the effect of varying drive on metastability features exhibited by the vortex matter in single crystals of 2H-NbSe$_2$ and CeRu$_2$ with varying degree of random pinning. An optimal balance between the pinning and driving force…
In this paper, we study the inference accuracy of the Resistive Random Access Memory (ReRAM) neuromorphic circuit due to stuck-at faults (stuck-on, stuck-off, and stuck at a certain resistive value). A simulation framework using Python is…
The aggressive scaling down of flash memories has threatened data reliability since the scaling down of cell sizes gives rise to more serious degradation mechanisms such as cell-to-cell interference and lateral charge spreading. The effect…
We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1 micron wide long stripes of a CoO/Co/Cu/NiFe classical spin valve structure. The stripes have been…
With Monte Carlo simulations, the nonsteady dynamics properties of a domain wall have been systematically investigated for the thermally activated creep state under an alternating driving field. Taking the driven random-field Ising model in…
To make progress in understanding the issue of memory loss and history dependence in evolving complex systems, we consider the mixing rate that specifies how fast the future states become independent of the initial condition. We propose a…
With recent trend of wearable devices and Internet of Things (IoTs), it becomes attractive to develop hardware-based deep convolutional neural networks (DCNNs) for embedded applications, which require low power/energy consumptions and small…
Humans possess a finely tuned sense of uncertainty that helps anticipate potential errors, vital for adaptive behavior and survival. However, the underlying neural mechanisms remain unclear. This study applies moment neural networks (MNNs)…
Disordered pinning models are statistical mechanics models built on discrete renewal processes: renewal epochs in this context are called contacts. It is well known that pinning models can undergo a localization/delocalization phase…
We study the contribution of stochastic motion of a domain wall (DW) to the dielectric AC susceptibility for low frequencies. Using the concept of waiting time distributions, which is related to the energy landscape of the DW in a…
Because deep neural networks (DNNs) rely on a large number of parameters and computations, their implementation in energy-constrained systems is challenging. In this paper, we investigate the solution of reducing the supply voltage of the…
Magnetic field driven domain wall velocities in [Co/Ni] based multilayers thin films have been measured using polar magneto-optic Kerr effect microscopy. The low field results are shown to be consistent with the universal creep regime of…
The commercialization of non-volatile memories based on ferroelectric transistors (FeFETs) has remained elusive due to scaling, retention, and endurance issues. Thus, it is important to develop accurate characterization tools to quantify…
Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…