Related papers: Toward accurate polarization estimation in nanosco…
We describe ferroelectric thin films with circular electrodes and develop a thermodynamic theory that explains previously mysterious experiments. It is found to be especially useful for restricted geometries such as microstructures for…
There is growing evidence that domain walls in ferroics can possess emergent properties that are absent in bulk materials. For example, 180 domain walls in the ferroelectric-antiferromagnetic BiFeO3 are particularly interesting because they…
Fluorite ferroelectrics are exciting candidates for next-generation non-volatile memory devices because their unique ferroelectric mechanism, which arises from unconventional oxygen displacements, permits ferroelectricity with minimal…
In the past decade, several neutron reflectometry methods for determining the modulus and phase of the complex reflection coefficient of an unknown multilayer thin film have been worked out among which the method of variation of…
Very recently there was a report of the discovery using piezoelectric force microscopy (PFM) of a switchable ferroelectric polarization in 1.6 % tensile strained TiO2 thin film with anatase crystal structure (see N. Deepak et al. Adv.…
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of…
The interplay between electrochemical surface charges and bulk ferroelectricity in thin films gives rise to a continuum of coupled ferro-ionic states. These states are exquisitely sensitive to chemical and electric conditions at the…
Thermoelectric films and periodic structures have particularly intriguing electrical and thermal transport features due to their low dimensionality. As a result, they have piqued the attention of researchers from across the spectrum of…
The spin polarization P of the transport current through the interface between superconducting Al and ferromagnetic Fe is determined by means of Andreev reflection at nanostructured point contacts. We observe a systematic decrease of P with…
Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop…
We investigate a model nanopore sensor that is able to detect analyte ions that are present in the electrolyte solution in very small concentrations. The nanopore selectively binds the analyte ions with which the local concentrations of the…
The electronic functionality of thin films is governed by their interfaces. This is very important for the ferroelectric (FE) state which depends on thin-film clamping and interfacial charge transfer. Here we show that in a heterostructure…
We employ polarization tomography to characterize the modal properties of a dielectric nanocavity with sub-wavelength mode confinement. Our analysis of reflection spectra shows that the Fano-lineshape depends strongly on the polarization in…
Electric Scanning Probe Microscopies are used to characterize the surface behavior of ferroelectric materials. The effects of local charge density on the chemistry and physics of ferroelectric surfaces are investigated. The kinetics and…
We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from…
The ferroelectric properties of disorder Pb(Zr$_{0.5}$Ti$_{0.5}$)O$_{3}$ thin films are investigated with Monte Carlo simulations on the basis of a first-principles-derived Hamitonian. It is found that there exists a critical thickness of…
A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, helping to explain why polar metals are…
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresist-based detection technique to map the spatial distribution…
Four-dimensional scanning transmission electron microscopy (4D-STEM) provides rich, atomic-scale insights into materials structures. However, extracting specific physical properties - such as polarization directions essential for…
An accurate estimate of the ferroelectric polarization in ferroelectric-dielectric stacks is important from a materials science perspective, and it is also crucial for the development of ferroelectric based electron devices. This paper…