Related papers: Large inverted band-gap in strained three-layer In…

We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2-50 K. The temperature…

Atomically thin topological materials are attracting growing attention for their potential to radically transform classical and quantum electronic device concepts. Amongst them is the quantum spin Hall (QSH) insulator - a two-dimensional…

InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that…

SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum wells are widely utilized. In these structures, band…

We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by…

We investigate the current noise in HgTe-based quantum wells with an inverted band structure in the regime of disordered edge transport. Consistent with previous experiments, the edge resistance strongly exceeds $h/e^2$ and weakly depends…

We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain…

We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands…

Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…

Quantum spin Hall insulators (QSHIs) and excitonic insulators (EIs) are prototypical topological and correlated states of matter, respectively. The topological phase transition between the two has attracted much theoretical interest but…

We report on the observation of a helical Luttinger-liquid in the edge of InAs/GaSb quantum spin Hall insulator, which shows characteristic suppression of conductance at low temperature and low bias voltage. Moreover, the conductance shows…

We present our recent electronic transport results in top-gated InAs/GaSb quantum well hybrid structures with superconducting Ta electrodes. We show that the transport across the InAs-Ta junction depends largely on the interfacial…

A strong coupling between the electron spin and its motion is one of the prerequisites of spin-based data storage and electronics. A major obstacle is to find spin-orbit coupled materials where the electron spin can be probed and…

The quantum spin Hall (QSH) state is a genuinely new state of matter characterized by a non-trivial topology of its band structure. Its key feature is conducting edge channels whose spin polarization has potential for spintronic and quantum…

The temperature and magnetic field dependences of the conductivity of the heterostructures with asymmetric In$_x$Ga$_{1-x}$As quantum well are studied. It is shown that the metallic-like temperature dependence of the conductivity observed…

Quantum anomalous Hall (QAH) insulator is a topological phase which exhibits chiral edge states in the absence of magnetic field. The celebrated Haldane model is the first example of QAH effect, but difficult to realize. Here, we predict…

The existence of a metal-insulator transition at zero magnetic field in two- dimensional electron systems has recently been confirmed in high mobility Si-MOSFETs. In this work, the temperature dependence of the resistivity of gated…

The quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon that manifests as a quantized transverse conductance in response to a longitudinally applied electric field in the absence of an external magnetic field,…

We study molecular beam epitaxially grown, undoped Al$_{x}$Ga$_{1-x}$Sb/InAs/AlSb quantum wells with different buffer and barrier designs and varying quantum well width. The highest mobilities were achieved with Al$_{0.33}$Ga$_{0.67}$Sb…

Experimental studies of magnetoresistance in high-mobility wide quantum wells reveal oscillations which appear with an increase in temperature to 10 K and whose period is close to that of Shubnikov-de Haas oscillations. The observed…