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Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to…
Lowering the operating voltage of electrooptic modulators is desirable for a variety of applications, most notably in analog photonics , and digital data communications . In particular for digital systems such as CPUs, it is desirable to…
Recent experiments showed that unity-order index change in a transparent conducting oxide (TCO) can be achieved in a metal-oxide-semiconductor (MOS) structure by accumulation charge. However, the ultrathin (~5nm) accumulation layer and…
We compare modulator designs on thick-film and thin-film silicon-on-insulator (SOI) substrates based on the carrier-depletion effect. This effect exhibits a lower junction capacitance as compared to its injection counterparts, leading to a…
Electro-optic (EO) modulation is a key functionality to have on-chip. However, achieving a notable linear EO effect in stoichiometric silicon nitride has been a persistent challenge due to the material's intrinsic properties. Recent…
The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and…
Thin film lithium niobate (TFLN) based electro-optic modulator is widely applied in the field of broadband optical communications due to its advantages such as large bandwidth, high extinction ratio, and low optical loss, bringing new…
Segmented, or slow-wave electrodes have emerged as an index-matching solution to improve bandwidth of traveling-wave Mach Zehnder and phase modulators on the thin-film lithium niobate on insulator platform. However, these devices require…
Thanks to its high quadratic nonlinear susceptibilty and low propagation losses, thin film lithium niobate (TFLN) on insulator is an ideal platform for laser frequency conversion and generation of quantum states of light. Frequency…
Silicon nitride (SiN) is currently the most prominent platform for photonics at visible and near-IR wavelength bandwidth. However, realizing fast electro-optic (EO) modulators, the key components of any integrated optics platform, remains…
We present an electro-optic modulator exploiting an array of Vanadium dioxide nanorods operating in the epsilon near regime as the active switching material integrated in a silicon waveguide. The modulator takes advantage of the…
We present a seeded topology optimization methodology for integrated photonic devices fabricated on foundry platforms that yields improved performance compared to traditional topology optimization. We employ blurring filters and a design…
We present the design, modeling, and optimization of high-performance plasmonic electro-optic modulators leveraging voltage-gated carrier density in indium tin oxide (ITO) where the gated carrier density is modeled using both the Classical…
In high-performance RF photonic systems, the Electro-Optic (EO) modulators play a critical role as a key component, requiring low SWaP-C and high linearity. While traditional lithium niobate (LiNbO$_3$) Mach-Zehnder Modulators (MZMs) have…
Acousto-optic (AO) interactions provide a powerful interface between the microwave and optical domains, enabling functionalities such as optical switching, non-reciprocal propagation and efficient microwave-to-optical transduction.…
The capability to modulate the intensity of an optical beam has scientific and practical significance. In this work, we demonstrate Y-Z cut lithium niobate acousto-optic modulators with record-high modulation efficiency, requiring only…
Waveguide-based interferometric circuits are widely employed in optical communications, sensing and computing applications. In particular, glass-based devices are appealing due to the transparency and bio-compatibility of this substrate, or…
We show efficient electro-optic modulation in a subwavelength gap-plasmon waveguide (GPW) formed by an electro-optic polymer with metal coatings. The proposed device is studied in the attenuated total reflection and end-fire configurations.…
Wafer-level testing is an important step for process and quality control of electronic chips in integrated circuit (IC) manufacturing which occurs before packaging. The process of wafer probing in its conventional contacting schemes,…
Electro-optic modulators from non-linear $\chi^{(2)}$ materials are essential for sensing, metrology and telecommunications because they link the optical domain with the microwave domain. At present, most geometries are suited for fiber…