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We present a three-band tight-binding (TB) model for describing the low-energy physics in monolayers of group-VIB transition metal dichalcogenides $MX_2$ ($M$=Mo, W; $X$=S, Se, Te). As the conduction and valence band edges are predominantly…

Materials Science · Physics 2014-03-07 Gui-Bin Liu , Wen-Yu Shan , Yugui Yao , Wang Yao , Di Xiao

Monolayer transition metal dichalcogenides $MX_2$ ($M$ = Mo,W and $X$ = Te, Se, S) in 1T' structure were predicted to be quantum spin Hall insulators based on first-principles calculations, which were quickly confirmed by multiple…

Materials Science · Physics 2021-08-04 Mengli Hu , Guofu Ma , Chun Yu Wan , Junwei Liu

The electronic properties of monolayer tin dulsulphide (ML-SnS2), a recently synthesized metal dichalcogenide, are studied by a combination of first-principles calculations and tight-binding (TB) approximation. An effective lattice…

Computational Physics · Physics 2018-06-20 Jin Yu , Edo van Veen , Mikhail I. Katsnelson , Shengjun Yuan

Moir\'e superlattices have emerged as a versatile platform for exploring a wide range of ex- otic quantum phenomena. Unlike angstrom-scale materials, the moir\'e length-scale system contains a large number of atoms, and its electronic…

Materials Science · Physics 2025-11-10 Xueheng Kuang , Federico Escudero , Pierre A. Pantaleón , Francisco Guinea , Zhen Zhan

We present a computationally efficient transferable single-band tight-binding model (SBTB) for spin polarized transport in heterostructures with an effort to capture the band structure effects. As an example, we apply it to study transport…

Mesoscale and Nanoscale Physics · Physics 2009-02-24 Tehseen Z. Raza , Hassan Raza

The electronic properties of single-layer antimony are studied by a combination of first-principles and tight-binding methods. The band structure obtained from relativistic density functional theory is used to derive an analytic…

Materials Science · Physics 2017-02-23 A. N. Rudenko , M. I. Katsnelson , R. Roldán

We present an accurate \textit{ab-initio} tight-binding hamiltonian for the transition-metal dichalcogenides, MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$, with a minimal basis (the \textit{d} orbitals for the metal atoms and \textit{p} orbitals for…

Mesoscale and Nanoscale Physics · Physics 2015-11-09 Shiang Fang , Rodrick Kuate Defo , Sharmila N. Shirodkar , Simon Lieu , Georgios A. Tritsaris , Efthimios Kaxiras

Semiconducting transition metal dichalcogenides present a complex electronic band structure with a rich orbital contribution to their valence and conduction bands. The possibility to consider the electronic states from a tight-binding model…

Materials Science · Physics 2016-11-15 J. A. Silva-Guillén , P. San-Jose , R. Roldán

First-principles electronic structure calculations have been very useful in understanding some of the properties of the new iron-based superconductors. Further explorations of the role of the individual atomic orbitals in explaining various…

Superconductivity · Physics 2010-08-05 D. A. Papaconstantopoulos , M. J. Mehl , M. D. Johannes

An empirical $s_cp^3_a$ tight-binding (TB) model is applied to the investigation of electronic states in semiconductor quantum dots. A basis set of three $p$-orbitals at the anions and one $s$-orbital at the cations is chosen. Matrix…

Other Condensed Matter · Physics 2009-11-11 Stefan Schulz , Gerd Czycholl

We present a careful recasting of first-principles band structure calculations for MgB2 in a non-orthogonal sp-tight-binding (TB) basis. Our TB results almost exactly reproduce our full potential linearized augmented plane wave results for…

Superconductivity · Physics 2009-11-07 D. A. Papaconstantopoulos , M. J. Meh

Simulation of mesoscopic nanostructures is a central challenge in condensed matter physics and device applications. First-principles methods provide accurate electronic structures but are computationally prohibitive for large systems, while…

Materials Science · Physics 2025-10-03 Guan-Hao Peng , Chin-Jui Huang , Wen-Teng Yang , Shun-Jen Cheng

A non-perturbative relativistic tight-binding (TB) approximation method applicable to crystalline material immersed in a magnetic field was developed in 2015. To apply this method to any material in the magnetic field, the electronic…

Materials Science · Physics 2023-11-27 Rohin Sharma , Amit Shrestha , Masahiko Higuchi , Katsuhiko Higuchi , Dipendra B. Hamal

The linear combination of atomic orbitals (LCAO) is a standard method for studying solids and molecules, it is also known as the tight$-$binding (TB) method. In most of the implementations only the basis set and the coupling constants are…

Materials Science · Physics 2024-01-18 Graziâni Candiotto

Molybdenum disulfide (MoS2) is a layered semiconductor which has become very important recently as an emerging electronic device material. Being an intrinsic semiconductor the two-dimensional MoS2 has major advantages as the channel…

Mesoscale and Nanoscale Physics · Physics 2013-04-02 Ferdows Zahid , Lei Liu , Yu Zhu , Jian Wang , Hong Guo

Hexagonal boron nitride ($\it h$-BN) exhibits dominant $\pi$-bands near the Fermi level, similar to graphene. However, unlike graphene, where tight-binding (TB) models accurately reproduce band edges near the $K$ and $K^{\prime}$ points in…

Materials Science · Physics 2024-09-04 Srivani Javvaji , Fengping Li , Jeil Jung

Ultraflat bands have already been detected in twisted bilayer graphene and twisted bilayer transition-metal dichalcogenides, which provide a platform to investigate strong correlations. In this paper, the electronic properties of twisted…

Materials Science · Physics 2024-03-05 Yonggang Li , Zhen Zhan , Shengjun Yuan

We investigate the electronic structure of the ternary iron selenide K$_{y}$% Fe$_{1.6}$Se$_{2}$ by considering the spatial symmetry of the $\sqrt{5}% \times \sqrt{5}$ vacancy ordered structure. Based on three orbitals of $% t_{2g}$, which…

Strongly Correlated Electrons · Physics 2011-11-28 Shin-Ming Huang , Chung-Yu Mou

An empirical multiorbital (spd) tight binding (TB) model including magnetism and spin-orbit coupling is applied to calculations of magnetic anisotropy energy (MAE) in CoPt L1_0 structure. A realistic Slater-Koster parametrisation for…

Materials Science · Physics 2014-03-05 J. Zemen , J. Mašek , J. Kučera , J. A. Mol , P. Motloch , T. Jungwirth

Strain provides a powerful knob to tailor the electronic properties of semiconductors. Simple yet accurate approximations that capture strain effects in demanding simulations of mesoscopic nanostructures are therefore highly desirable.…

Materials Science · Physics 2025-09-17 Samuel D. Escribano , Alfredo Levy Yeyati , Elsa Prada
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