Related papers: FinFET and Nanowire SRAM Radiation Hardness Studie…

Radiation hard n-Fz Double Sided Silicon microstrip Detectors are used at the Silicon Tracker for the detection of two-dimensional position and energy measurement of the incident protons in the R3B experiment at FAIR, Darmstadt, Germany.…

In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the…

The radiation hardness of the AToM chips of the BaBar Silicon Vertex Tracker has been investigated by means of irradiations with photons from a 60Co source and 0.9 GeV electrons. The increase in noise and the decrease in gain of the…

Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have…

The ever-expanding scale of integrated circuits has brought about a significant rise in the design risks associated with radiation-resistant integrated circuit chips. Traditional single-particle experimental methods, with their iterative…

Hardware-based spiking neural networks (SNNs) are regarded as promising candidates for the cognitive computing system due to low power consumption and highly parallel operation. In this work, we train the SNN in which the firing time…

This work reports on the modeling, fabrication, and experimental characterization of a 13 GHz 30% Scandium-doped Aluminum Nitride (ScAlN) Overmoded Bulk Acoustic Resonator (OBAR) for high-frequency Radio Frequency (RF) applications, notably…

A simulation framework that couples atomistic electronic structures to Boltzmann transport formalism is developed and applied to calculate the transport characteristics of thin silicon nanowires (NWs) up to 12nm in diameter. The…

Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods…

Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally have hindered the fundamental challenges in application of…

This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate…

Nanowires are versatile nanostructures, which allow an exquisite control over bandgap energies and charge carrier dynamics making them highly attractive as building blocks for a broad range of photonic devices. For optimal solutions…

Radiation hardening of the MOSFET is of the highest priority for sustaining high-power systems in the space radiation environment. SiC-based power electronics are being looked at as a strong alternative for high power spaceborne power…

Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…

Near-field millimeter-wave (mmWave) imaging is widely deployed in safety-critical applications such as airport passenger screening, yet its own security remains largely unexplored. This paper presents a systematic study of the adversarial…

We present a surface stacking fault (SSF) energy approach to predicting defect nucleation from the surfaces of surface-dominated nanostructure such as FCC metal nanowires. The approach leads to a criteria that predicts the initial yield…

Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that…

We introduce a scattering-type scanning near-field infrared microscope (s-SNIM) for the local scale near- field sample analysis and spectroscopy from room (RT) down to liquid helium (LHe) temperatures. The extension of s-SNIM down to T = 5K…

We report an investigation of the structural and electronic properties of hybrid superconductor/ferromagnet (S/F) bilayers of composition Nb/Cu$_{60}$Ni$_{40}$ prepared by magnetron sputtering. X-ray and neutron reflectometry show that both…

Recently, split ring-resonators (SRR's) have been realized experimentally in the near infrared (NIR) and optical regime. In this contribution we numerically investigate light propagation through an array of metallic SRR's in the NIR and…