Related papers: Structural reorientation and compaction of porous …
The advantage of MoS2, compared with graphene, is the direct growth on various oxide substrates by chemical vapor deposition (CVD) without utilizing catalytic metal substrates, which facilitates practical applications for electronics. The…
The wear behavior of two amorphous and polycrystalline forms of MoS2 prepared by magnetron sputtering has been characterized in a combined nanoindentation and atomic force microscopy study. From the analysis of the depth and width of wear…
Understanding the microscopic mechanism of chemical vapor deposition (CVD) growth of two-dimensional molybdenum disulfide (2D MoS2) is a fundamental issue towards the function-oriented controlled growth. In this work, we report results on…
The frictional and wear performance of molybdenum disulfide (MoS2) is significantly influenced by its intrinsic arrangement of crystals or crystallinity. In this study, we investigate the effect of crystallinty on coefficient of friction…
Recent success in the growth of monolayer MoS$_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the…
MoS2 is a highly interesting material system, which exhibits a crossover from an indirect band gap in the bulk crystal to a direct gap for single layers. Here, we perform a direct comparison between large-area MoS$_2$ films grown by…
The recent development of Liquid Phase Exfoliation (LPE) of 2D materials has enabled the formulation of inks with rheological properties adapted to numerous liquid deposition methods. This has allowed the fabrication of various types of…
Chemical vapor deposition (CVD) of two-dimensional (2D) materials such as monolayer MoS2 typically involves the conversion of vapor-phase precursors to a solid product in a process that may be described as a vapor-solid-solid (VSS) mode.…
Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si…
Monolayer molybdenum disulphide (MoS$_2$) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS$_2$ has been demonstrated using chemical vapor deposition (CVD) in a…
The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising…
MoS2 is one of the important members of transition metal dichalogenides which is emerging as a potential 2D atomically thin layered material for low power electronic and opto-electronic applications. However, for MoS2 a critical fundamental…
Transition metal dichalcogenides (TMDs) have recently attracted attention due to their interesting electronic and optical properties. Fabrication of these materials in a reliable and facile method is important for future applications, as…
The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area…
Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality…
Electronic and dielectric properties of vapor-phase grown MoS_{2} have been investigated in metal/MoS_{2}/silicon capacitor structures by capacitance-voltage and conductancevoltage techniques. Analytical methods confirm the MoS_{2} layered…
We report a technique for transferring large areas of the CVD-grown, few-layer MoS2 from the original substrate to another arbitrary substrate and onto holey substrates, in order to obtain free-standing structures. The method consists of a…
Defects in atomically thin materials can drive new functionalities and expand applications to multifunctional systems that are monolithically integrated. An ability to control formation of defects during the synthesis process is an…
We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier densities (up to ~10^13 1/cm^2) and temperatures (80-500 K).…
Elastic properties of materials are an important factor in their integration in applications. Chemical vapor deposited (CVD) monolayer semiconductors are proposed as key components in industrial-scale flexible devices and building blocks of…