Related papers: Spin Hall magnetoresistance effect from a disorder…
A change in a materials electrical resistance with magnetic field (magnetoresistance) results from quantum interference effects and, or spin-dependent transport, depending on materials properties and dimensionality. In disordered…
We revisit the theory and experiment on spin Hall magnetoresistance (SMR) in bilayers consisting of a heavy metal (H) coupled to in-plane magnetized ferromagnetic metal (F), and determine contributions to the magnetoresistance due to SMR…
Compounds with two-dimensional (2D) layers of magnetic ions weakly connected by van der Waals bonding offer routes to enhance quantum behavior, stimulating both fundamental and applied interest. CrPS4 is one such magnetic van der Waals…
Antiferromagnets with broken time-reversal symmetry, such as Mn3Sn, have emerged as promising platforms for exploring topological and correlated electron physics. Mn3Sn is known to show two magnetic phase transitions: a non-collinear…
Short-range surface plasmon polaritons (SR-SPPs) can arise due to the hybridization of surface plasmon polaritons propagating along the two interfaces of a thin metal slab. In optics, they have gained particular interest for imaging and…
We investigate the magnetic proximity effect in van der Waals heterostructure formed by a monolayer semiconductor stacked on a 2D ferromagnet, where the lattice mismatch and twisting between the layers typically lead to the formation of…
Colossal magnetoresistance (CMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, CMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or…
Magneto-optical effect has been widely used in light modulation, optical sensing and information storage. Recently discovered two-dimensional (2D) van der Waals layered magnets are considered as promising platforms for investigating novel…
We study spin Hall magnetoresistance (SMR) in Pt/ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ (YIG) bilayers by focusing on crystallinity, magnetization, and interface roughness by controlling post-annealing temperatures. The SMR in the…
Magnetic proximity interactions (MPIs) between atomically-thin semiconductors and two-dimensional magnets provide a means to manipulate spin and valley degrees of freedom in nonmagnetic monolayers, without the use of applied magnetic…
Spin-memory loss (SML) of electrons traversing ferromagnetic-metal/heavy-metal (FM/HM), FM/normal-metal (FM/NM) and HM/NM interfaces is a fundamental phenomenon that must be invoked to explain consistently large number of spintronic…
The antiferromagnets with the time-reversal symmetry broken magnetic structures possess a finite spin splitting in the momentum space, and may contribute to a realization of a finite tunnel magnetoresistance (TMR) effect even with magnets…
We study the effect of a resonant frequency disorder on the eigenstates and the transport of magnetic energy in a two-dimensional (square) array of split-ring resonators (SRRs). In the absence of disorder, we find the dispersion relation of…
Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG structures in a wide range of temperature and NiO thickness. The SMR shows a negative sign below a temperature which increases with the NiO thickness. This is contrary to…
Semiconductor-metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite…
Mn$_3$Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial $c$-plane Mn$_3$Sn thin films have been grown on a…
We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an…
Magnetotransport is at the center of the spintronics. Mn3Sn, an antiferromagnet that has a noncollinear 120{\deg} spin order, exhibits large anomalous Hall effect (AHE) at room temperature. But such a behavior has been remained elusive in…
Antiferromagnets are emerging as promising alternatives to ferromagnets in spintronics applications. A key feature of antiferromagnets is their anisotropic magnetoresistance (AMR), which has the potential to serve as a sensitive marker for…
Colossal magnetoresistance (CMR) is a fascinating quantum phenomenon that continues to draw significant interest in condensed matter physics. Mn3Si2Te6 has emerged as a prototypical CMR material, notable for its puzzling magnetoresistance…