Related papers: Spin Hall magnetoresistance effect from a disorder…
The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$).…
Robustness to disorder - the defining property of any topological state - has been mostly tested in low-disorder translationally-invariant materials systems where the protecting underlying symmetry, such as time reversal, is preserved. The…
Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered…
Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological…
The field of 2D magnetic materials has paved the way for the development of spintronics and nanodevices with new functionalities. Utilizing antiferromagnetic materials, in addition to layered van der Waals (vdW) ferromagnetic materials, has…
The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity…
Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many…
A systematic, quantitative study of the effect of interface roughness and disorder on the magnetoresistance of FeCo$|$vacuum$|$FeCo magnetic tunnel junctions is presented based upon parameter-free electronic structure calculations. Surface…
Extraordinary magnetoresistance (EMR) is a geometric magnetoresistance effect occurring in hybrid devices consisting of a high-mobility material joined by a metal. The change in resistance can exceed 107% at room temperature when a magnetic…
Spin Hall magnetoresistance (SMR) and magnon excitation magnetoresistance (MMR) that all generate via the spin Hall effect and inverse spin Hall effect in a nonmagnetic material are always related to each other. However, the influence of…
We study the influence of the interface quality of Pt/Y$_3$Fe$_5$O$_{12}$(111) hybrids on their spin Hall magnetoresistance. This is achieved by exposing Y$_3$Fe$_5$O$_{12}$(111) single crystal substrates to different well-defined surface…
Controlling the stacking of van der Waals (vdW) materials is found to produce exciting new findings, since hetero- or homo- structures have added the diverse possibility of assembly and manipulated functionalities. However, so far, the…
Multiferroics have found renewed interest in topological magnetism and for logic-in-memory applications. Among them, SrMnO$_{3}$, possessing strong magnetoelectric coupling is gaining attention for the design of coexisting magnetic and…
Two-dimensional van der Waals compounds with magnetic ions on a honeycomb lattice are hosts to a variety of exotic behavior. The magnetic interactions in one such compound, MnPSe$_3$, are investigated with elastic and inelastic neutron…
STM based magnetotransport measurements of epitaxial La$_{0.7}$Sr$_{0.3}$MnO$_3$ 32 nm thick films with and without an internal LaMnO$_3$ layer (0-8 nm thick) grown on Nb doped SrTiO$_3$ are presented. The measurements reveal two types of…
We report on the electrical and magneto-transport properties of the contact formed between polycrystalline NiMnSb thin films grown using pulsed laser deposition (PLD) and n-type degenerate InSb (100) substrates. A negative giant…
The recent research interests in the non-relativistic spin splitting of electronic band structures have led to the exploration of altermagnets and other compensated magnets. Here, we show that various types of non-relativistic spin…
Mn$_{3}$Sn is a non-collinear antiferromagnet which displays a large anomalous Hall effect at room temperature. It is believed that the principal contribution to its anomalous Hall conductivity comes from Berry curvature. Moreover, dc…
Van der Waals magnets are uniquely positioned at the intersection between two-dimensional materials, antiferromagnetic spintronics, and magnonics. The interlayer exchange interaction in these materials enables antiferromagnetic resonances…
Magnetic ordering in the two-dimensional limit has been one of the most important issues in condensed matter physics for the past several decades. The recent discovery of new magnetic van der Waals materials heralds a much-needed easy route…