Related papers: Control of sensitivity in vortex-type magnetic tun…
Understanding heat generation and transport processes in a magnetic tunnel junction (MTJ) is a significant step towards improving its application in current memory devices. Recent work has experimentally demonstrated the magneto-Seebeck…
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR)…
Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional…
The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the…
A new spintronic theory has been developed for the magnetic tunnel junction (MTJ) with single-crystal barrier. The barrier will be treated as a diffraction grating with intralayer periodicity, the diffracted waves of tunneling electrons…
The increasing need for efficient thermal management in nanoelectronics requires innovative thermal sensing solutions, as conventional sensors often exhibit nonlinear responses, low sensitivity, and complex calibration. We predict a…
We demonstrate an interface-sensitive NMR in a semiconducting nanostructure, where an NMR signal from the minute heterojunction region of a model heterojunction structure (In$_{0.48}$Ga$_{0.52}$P/GaAs) is detected by using nuclear…
Solid-state magnetic field sensors are important to both modern electronics and fundamental materials science. Many types of these sensors maintain high sensitivity only in a limited range of temperature and background magnetic field, but…
In this work we investigate the effect of the mechanical stress on the performance of magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy. We developed a 4-point bending setup, that allows us to apply a constant stress…
Hybrid magnetometers based on a normal conducting sensor and a superconducting flux concentrator have been investigated. When this sensor is operated in an unshielded environment flux vortices can be trapped in the superconducting body when…
Being nonlinear dynamic systems, magnetic read sensors should respond to an excitation signal of a frequency considerably different from their natural ferromagnetic resonance (FMR) frequencies. Because of the magnetization dynamics'…
In this manuscript we propose a theoretical model where the magneto-resistive elements are modelled as fluctuating resistances to correct the output voltage noise of tunnel magnetic junction (MTJ) from standard electronic circuits. This…
We study current-induced switching in magnetic tunnel junctions (MTJs) in the presence of a field-like spin-transfer torque and titled pinned-layer magnetization in the high current limit at finite temperature. We consider both the…
Subjecting a magnetic tunnel junction (MTJ) to a spin current and/or electric voltage induces magnetic precession, which can reciprocally pump current through the circuit. This results in an ac impedance, which is sensitive to the magnetic…
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…
We investigate the tunneling magnetoresistance in magnetic tunnel junctions (MTJs) comprised of Weyl semimetal contacts. We show that chirality-magnetization locking leads to a gigantic tunneling magnetoresistance ratio, an effect that does…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
We calculate the tunneling magnetoresistance (TMR) of Fe|ZnSe|Fe|ZnSe|Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layer's thickness, and compare these results with those of Fe|ZnSe|Fe simple junctions. The…
The field of 2D magnetic materials has paved the way for the development of spintronics and nanodevices with new functionalities. Utilizing antiferromagnetic materials, in addition to layered van der Waals (vdW) ferromagnetic materials, has…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…