Related papers: Control of sensitivity in vortex-type magnetic tun…
Micromagnetic sensors play a major role towards the miniaturization in the industrial society. The adoption of new and emerging sensor technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunnel…
We examine vortex dynamics and pinning in layered superconductors using three-dimensional molecular dyanmics simulations of magnetically interacting pancake vortices. Our model treats the magnetic interactions of the pancakes exactly, with…
Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…
Graphical probabilistic circuit models of stochastic computing are more powerful than the predominant deep learning models, but also have more demanding requirements. For example, they require "programmable stochasticity", e.g. generating…
The planar Hall sensitivity of obliquely deposited NiFe(10)/Pt(tPt) /IrMn(8)/Pt(3) (nm) trilayer structures has been investigated by introducing interfacial modification and altering sensor geometry. The peak-to-peak PHE voltage and AMR…
Topological magnetic textures are of great interest in various scientific and technological fields. To allow for precise control of nanoscale magnetism, it is of great importance to understand the role of intrinsic defects in the host…
Magnetic tunnel junctions (MTJs) based on all-two dimensional (2D) van der Waals heterostructures with sharp and clean interfaces in atomic scale are essential for the application of next-generation spintronics. However, the lack of…
Synaptic memory is considered to be the main element responsible for learning and cognition in humans. Although traditionally non-volatile long-term plasticity changes have been implemented in nanoelectronic synapses for neuromorphic…
The development of compact and highly sensitive microwave detectors compatible with complementary-metal-oxide-semiconductor (CMOS) processes is an active research area but remains a major challenge in microwave technology. Spin-torque…
In this letter, we present a study of optimized TMR magnetic field sensors as a function of voltage bias. The 1/f low-frequency noise is quantified by the Hooge-like parameter {\alpha} which allows to compare the low-frequency behavior of…
The electrically readable complex dynamics of robust and scalable magnetic tunnel junctions (MTJs) offer promising opportunities for advancing neuromorphic computing. In this work, we present an MTJ design with a free layer and two…
We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…
We present a spin Hall magnetoresistance sensor based on a NiFe/Pt multiring bridge structure, which exhibits high sensitivity and good linearity in two perpendicular directions within the sensor plane. Under DC excitation, it responds…
We present an experimental and theoretical study of the magnetic field dependence of the mode frequency of thermally excited spin waves in rectangular shaped nanopillars of lateral sizes 60x100, 75x150, and 105x190 nm2, patterned from…
The interaction between a straight vortex line in a superconducting film and a soft magnetic nanodisk in the magnetic vortex state in the presence of a magnetic field applied parallel to the film surfaces is studied theoretically. The…
Disorder in magnetic materials prevents reliable control of spin textures and constrains their integration into spintronic devices. Existing methods access disorder only indirectly through external imaging probes or bulk transport…
This work presents an equivalent circuit model for Magnetic Tunnel Junctions (MTJs) that accurately captures their magnetization dynamics and electrical behavior. Implemented in LTspice, the model is validated against direct numerical…
Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce the switching energy. However, the requirement of an external magnetic…
The current-voltage ($IV$) characteristics beyond the linear response regime of magnetic tunnel junction (MTJ) is systematically investigated. We find a clear negative correlation between the two coefficients to characterize the linear…
Strength of the the symmetry spin filtering effect (as defined by the asymptotic behavior of the tunneling magnetoresistance (TMR) at large barrier thicknesses induced by this effect) is studied for the Fe/MgO/Fe magnetic tunnel junctions…