Related papers: Theory of Silicon Spin Qubit Relaxation in a Synth…
The transport of quantum information between different nodes of a quantum device is among the challenging functionalities of a quantum processor. In the context of spin qubits, this requirement can be met by coherent electron spin shuttling…
Understanding and controlling spin relaxation in molecular qubits is essential for developing chemically tunable quantum information platforms. We present a fully first-principles framework for computing the spin relaxation tensor in a…
Recent advances in scaling up spin-based quantum processors have revealed unanticipated issues related to thermal effects. Microwave pulses required to manipulate and read the qubits are found to overheat the spins environment, which…
Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to electrically control spins and as such lies at the foundation of spintronics. Even at the level of…
Relaxation of conduction electron spins in a semiconductor owing to the hyperfine interaction with spin-1/2 nuclei, in zero applied magnetic field, is investigated. We calculate the electron spin relaxation time scales, in order to evaluate…
Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a…
Spin and valley-orbit splittings are calculated in SiGe/Si/SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with…
We review progress on the spintronics proposal for quantum computing where the quantum bits (qubits) are implemented with electron spins. We calculate the exchange interaction of coupled quantum dots and present experiments, where the…
We measure and analyze noise-induced energy-fluctuations of spin qubits defined in quantum dots made of isotopically natural silicon. Combining Ramsey, time-correlation of single-shot measurements, and CPMG experiments, we cover the qubit…
Graphene and bilayer graphene quantum dots are promising hosts for spin qubits with long coherence times. Although recent technological improvements make it possible to confine single electrons electrostatically in bilayer graphene quantum…
The realization of electron-spin resonance at the single-atom level using scanning tunneling microscopy has opened new avenues for coherent quantum sensing and quantum state manipulation at the ultimate size limit. This allows to build…
Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…
We consider relaxation of an electron spin in a nanotube quantum dot due to its coupling to flexural phonon modes, and identify a new spin-orbit mediated coupling between the nanotube deflection and the electron spin. This mechanism…
We have studied direct and Raman processes of the decay of electron spin states in a quantum dot via radiation of phonons corresponding to elastic twists. Universal dependence of the spin relaxation rate on the strength and direction of the…
Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which…
We simulate spin polarized transport of electrons along a silicon nanowire and along a silicon two dimensional channel. Spin density matrix calculations are used along with the semi-classical Monte Carlo approach to model spin evolution…
We use numerically exact diagonalization to calculate the spin-orbit and phonon-induced triplet-singlet relaxation rate in a two-electron quantum dot exposed to a tilted magnetic field. Our scheme includes a three-dimensional description of…
We study the electric-dipole transitions for a single electron in a double quantum dot located in a semiconductor nanowire. Enabled by spin-orbit coupling (SOC), electric-dipole spin resonance (EDSR) for such an electron can be generated…
Despite the recent interest in "organic spintronics", the dominant spin relaxation mechanism of electrons or holes in an organic compound semiconductor has not been conclusively identified. There have been sporadic suggestions that it might…
We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain,…