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Related papers: Current induced switching in Mn2Au from first prin…

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We theoretically consider a junction composed of a ferromagnetic insulator (FI) and a two-dimensional electron gas (2DEG) with Rashba- and Dresselhaus-type spin-orbit interactions. Using the Boltzmann equation, we calculate an electric…

Mesoscale and Nanoscale Physics · Physics 2024-09-04 Kaiji Hosokawa , Masaki Yama , Mamoru Matsuo , Takeo Kato

Antiferromagnets are promising candidates for ultrafast spintronic applications, leveraging current-induced spin-orbit torques. However, experimentally distinguishing between different switching mechanisms of the staggered magnetization…

Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the…

Materials Science · Physics 2018-07-04 Markus Meinert , Dominik Graulich , Tristan Matalla-Wagner

Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…

Materials Science · Physics 2020-03-25 Mareike Dunz , Tristan Matalla-Wagner , Markus Meinert

Motivated by recent experimental studies of thin-film devices containing a single ferromagnetic layer, we develop a quantum kinetic theory of current-induced magnetic torques in Rashba-model ferromagnets. We find that current-induced…

Mesoscale and Nanoscale Physics · Physics 2015-06-03 D. A. Pesin , A. H. MacDonald

A selfconsistent theory of the current-induced switching of magnetization using nonequilibrium Keldysh formalism is developed for a junction of two ferromagnets separated by a nonmagnetic spacer. It is shown that the spin-transfer torques…

Other Condensed Matter · Physics 2009-11-10 D. M. Edwards , F. Federici , J. Mathon , A. Umerski

Efficient manipulation of magnetic order with electric current pulses is desirable for achieving fast spintronic devices. The Rashba-Edelstein effect, wherein a spin polarization is electrically induced in noncentrosymmetric systems,…

Materials Science · Physics 2024-07-01 Leandro Salemi , Marco Berritta , Ashis K. Nandy , Peter M. Oppeneer

Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…

The effects of current induced N\'eel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We…

We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…

The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect…

Current induced switching in Co/Cu/Co trilayers is described in terms of ab-initio determined magnetic twisting energies and corresponding sheet resistances. In viewing the twisting energy as an energy flux the characteristic time thereof…

Materials Science · Physics 2009-11-10 P. Weinberger , A. Vernes , B. L. Gyorffy , L. Szunyogh

We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially…

Materials Science · Physics 2020-12-15 H. Meer , F. Schreiber , C. Schmitt , R. Ramos , E. Saitoh , O. Gomonay , J. Sinova , L. Baldrati , M. Kläui

Hyperfine interactions between electron and nuclear spins in the quantum Hall regime provide powerful means for manipulation and detection of nuclear spins. In this work we demonstrate that significant changes in nuclear spin polarization…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 Y. Q. Li , V. Umansky , K. von Klitzing , J. H. Smet

The Rashba-Edelstein effect stems from the interaction between the electron's spin and its momentum induced by spin-orbit interaction at an interface or a surface. It was shown that the inverse Rashba-Edelstein effect can be used to convert…

Mesoscale and Nanoscale Physics · Physics 2016-06-27 M. B. Jungfleisch , W. Zhang , J. Sklenar , W. Jiang , J. E. Pearson , J. B. Ketterson , A. Hoffmann

Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…

Efficient and fast manipulation of antiferromagnets has to date remained a challenging task, hindering their application in spintronic devices. For ultrafast operation of such devices, it is highly desirable to be able to control the…

Materials Science · Physics 2023-05-31 Markus Weißenhofer , Francesco Foggetti , Ulrich Nowak , Peter M. Oppeneer

We investigate the current induced magnetization dynamics and magnetization switching in an unconventional p-wave superconductor sandwiched between two misaligned ferromagnetic layers by numerically solving Landau-Lifshitz-Gilbert equation…

Superconductivity · Physics 2019-10-15 Saumen Acharjee , Umananda Dev Goswami

The current-induced magnetization dynamics of a spin valve are studied using a macrospin (single domain) approximation and numerical solutions of a generalized Landau-Lifshitz-Gilbert equation. For the purpose of quantitative comparison…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Jiang Xiao , A. Zangwill , M. D. Stiles

Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…

Materials Science · Physics 2025-07-30 Yanyan Yang , Weiwei Lin
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