Related papers: Magnetization Reversal Across Multiple Serial Barr…
A new approach based on the domain wall displacement in confined ferromagnetic nanostructures for attracting and sensing a single nanometric magnetic particles is presented. We modeled and experimentally demonstrated the viability of the…
Magnetization of soft-ferromagnetic nano- and microtubes of nanometer-thin walls (a single-widening rolled-up nanomembranes) is theoretically studied using analytical and numerical approaches including different stress-induced anisotropies.…
Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly…
With the increasing demand for low-power electronics, nanomagnetic devices have emerged as strong potential candidates to complement present day transistor technology. A variety of novel switching effects such as spin torque and giant spin…
Use of a spin polarized current for the manipulation of magnetic domain walls in ferromagnetic nanowires has been the subject of intensive research for many years. Recently, due to technological advancements, creating nano-contacts with…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
Investigation of the magnetic switching and magnetoresistive behaviour of nanoscale spin valve elements (SVs) of varying physical parameters such as shape, element size, dimensional aspect ratio, and array size is of vital importance for…
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…
The current induced magnetization reversal in nanoscale spin valves is a potential alternative to magnetic field switching in magnetic memory devices. We show that the critical switching current can be decreased by an order of magnitude by…
The magnetization switching of a thin ferromagnetic layer placed on top of a heavy metal (such as Pt, Ta or W) driven by an in-plane current has been observed in recent experiments. The magnetization dynamics of these processes is studied…
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…
An effective method for ultrafast magnetization reversal of nanoclusters is suggested. The method is based on coupling a nanocluster to a resonant electric circuit. This coupling causes the appearance of a magnetic feedback field acting on…
The continued increase in areal densities in magnetic recording makes it crucial to understand magnetization reversal in nanoparticles. We present finite-temperature micromagnetic simulations of hysteresis in Fe nanopillars with the long…
We study clean ferromagnet-superconductor-ferromagnet (FSF) nanostructures in which the magnetization of the F layers can be parallel (P) or antiparallel (AP). We consider the case where the thickness of the S layer is of order of the…
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall…
: Understanding the correlations between magnetic nanoparticles is important for nanotechnologies, such as high-density magnetic recording and biomedical applications, where functionalized magnetic particles are used as contrast agents and…
Developing permanent magnets with fewer critical elements requires understanding hysteresis effects and coercivity through visualizing magnetization reversal. Here, we numerically investigate the effect of the geometry of nanoscale…
We generalize domain-wall dynamics to the case of translationally noninvariant ferromagnetic nanowires. The obtained equations of motion make the description of the domain-wall propagation more realistic by accounting for the variations…
Antiferromagnets that display very small stray magnetic field are ideal for spintronic applications. Of particular interest are non-collinear, chiral antiferromagnets of the type Mn3X (X=Sn, Ge), which display a large magnetotransport…
Asymmetric magnetization reversal is an unusual phenomenon in antiferromagnet / ferromagnet (AF/FM) exchange biased bilayers. We investigated this phenomenon in a simple model system experimentally and by simulation assuming inhomogeneously…