Related papers: Spin Hall magnetoresistance in paramagnetic NdGaO3
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in…
Transport and magnetic studies on polycrystalline samples of SrFe1-xCoxO3-d have been carried out to investigate the relationship between the magnetic structure and the anomalous Hall resistivity rH. The hysteretic behavior of the…
Spin-orbit torques (SOTs) from transition metal oxides (TMOs) in conjunction with magnetic materials have recently attracted tremendous attention for realizing high-efficient spintronic devices. SrRuO3 is a promising candidate among TMOs…
We study the local and non-local magnetoresistance of thin Pt strips deposited onto yttrium iron garnet. The local magnetoresistive response, inferred from the voltage drop measured along one given Pt strip upon current-biasing it, shows…
Magnetic trilayers having large perpendicular magnetic anisotropy (PMA) and high spin-orbit torques (SOTs) efficiency are the key to fabricate nonvolatile magnetic memory and logic devices. In this work, PMA and SOTs are systematically…
We have used spherical neutron polarimetry to investigate the magnetic structure of the Mn spins in the hexagonal semimetal Mn$_3$Ge, which exhibits a large intrinsic anomalous Hall effect. Our analysis of the polarimetric data finds a…
The compound, Tb5Si3, crystallizing in Mn5Si3-type hexagonal structure, was recently reported by us to exhibit a sudden and huge enhancement in electrical resistivity (rho) at a critical magnetic field (H_cr) in the magnetically ordered…
We report magnetization, susceptibility, electrical transport, and electron spin resonance (ESR) studies of single crystals of beta-AgNpO2(SeO3). Here the valence of the Np sites is expected to be Np(V). We observe a magnetic transition…
Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite…
Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find nearly a ten-fold increase of SMR in W/CoFeB compared to previously studied…
Next-generation spintronic sensors aim to overcome the limitations of traditional tunneling-magnetoresistance (TMR) devices, such as complex manufacturing, high $1/f$ noise, and significant offsets. This work presents a comprehensive…
The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La0.7Sr0.3MnO3/SrTiO3 (LSMO/STO) superlattices grown by an rf sputtering system are systematically analyzed to study the spin polarization of manganite at…
In this paper, we report the observation of spin-orbit magnetoresistance (SOMR) in ferromagnetic metal/heavy metal/MgO system. We measure the magnetoresistance as the function of the thickness of heavy metal (HM) for CoFeB/HM/MgO and…
We present a detailed analysis of harmonic longitudinal and Hall voltage measurements for in-plane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers in reference to Pt/Co and Ta/Co bilayers. Enhancement of spin-orbit torques (SOTs) and…
Magnetic properties of La$_{1-x}$Sr$_x$MnO$_{3}$ (LSMO) are highly sensitive to various factors such as the Sr doping level $x$, lattice strain, and oxygen stoichiometry due to the strongly correlated nature of $3d$ electrons. For the…
Magnetoresistance (MR) in the out-of-plane resistivity $\rho_c$ for the normal state of the one-layer high-quality Bi_2Sr_2CuO_x single crystals under various dc magnetic fields up to 28 T over the temperature region 6-100 K has been…
The (111)-oriented 4d ferromagnetic perovskite SrRuO3 (SRO) offers a unique triangular-lattice geometry, making it a promising platform for exploring Berry-curvature-driven and spin-orbit-coupled transport. Here, we present a systematic…
Ferromagnetic metals, with the potential to generate spin current with unconventional spin polarization via the spin Hall effect, offer promising opportunities for field-free switching of perpendicular magnetization and for the spin-orbit…
Hysteretic magnetoresistance (MR) is often used as a signature of ferromagnetism in conducting oxide thin films and heterostructures. Here, magnetotransport is investigated in a non-magnetic uniformly La-doped SrSnO3 film grown using hybrid…
Multiferroics have found renewed interest in topological magnetism and for logic-in-memory applications. Among them, SrMnO$_{3}$, possessing strong magnetoelectric coupling is gaining attention for the design of coexisting magnetic and…