Related papers: Semiconductor waveguide quantum well lasers
Quantum cascade lasers (QCL) have revolutionized the generation of mid-infrared light. Yet, the ultrafast carrier transport in mid-infrared QCLs has so far constituted a seemingly insurmountable obstacle for the formation of ultrashort…
We have studied the coherent intercavity coupling of the evanescent fields of the whispering gallery modes of two terahertz quantum-cascade lasers implemented as microdisk cavities. The electrically pumped single-mode operating…
We consider a quantum particle in a waveguide which consists of an infinite straight Dirichlet strip divided by a thin semitransparent barrier on a line parallel to the walls which is modeled by a $\delta$ potential. We show that if the…
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 ${\mu}$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon.…
We present quantum Maxwell-Bloch equations (QMBE) for spatially inhomogeneous semiconductor laser devices. The QMBE are derived from fully quantum mechanical operator dynamics describing the interaction of the light field with the quantum…
Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging…
THz quantum cascade lasers based on a novel buried cavity geometry are demonstrated by combining double-metal waveguides with proton implantation. Devices are realised with emission at 2.8 THz, displaying ultra low threshold currents of 19…
Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed…
Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic…
Satellite-based quantum technologies represent a possible route for extending the achievable range of quantum communication, allowing the construction of worldwide quantum networks without quantum repeaters. In space missions, however, the…
This paper discusses free carrier generation by pulsed laser fields as a mechanism to switch the optical properties of semiconductor photonic crystals and bulk semiconductors on an ultrafast time scale. Requirements are set for the…
In a laser, the control of its spectral emission depends on the physical dimensions of the optical resonator, limiting it to a set of discrete cavity modes at specific frequencies. Here, we overcome this fundamental limit by demonstrating a…
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…
We demonstrate theoretically that robust mode-locking can be achieved on a semiconductor chip with a waveguide array architecture. The waveguide arrays are used as an ideal saturable absorption mechanism for initial noise start-up as well…
Simulation results, fabrication details and measurements are presented for a one dimensional aperture and grating array for the purpose of plasmonic beam shaping of the {\lambda}=3.99{\mu}m output of an optically pumped semiconductor laser.
We miniaturize a vertically-coupled in-plane whispering gallery mode cavity incorporating a quantum cascade gain medium, aiming to realize the mid-infrared counterpart to the vertical cavity surface emitting laser (VCSEL). Building on…
We review principles and trends in the use of semiconductor nanowires (NWs) as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as…
Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and…
The development of compact, energy-efficient integrated lasers operating at 1.3 um remains a critical focus in silicon photonics, essential for advancing data communications and optical interconnect technologies. This paper presents a…
We report the unequivocal demonstration of mid-infrared mode-locked pulses from a semiconductor laser. The train of short pulses was generated by actively modulating the current and hence the optical gain in a small section of an…