Related papers: Optimizing the light penetration depth in APDs and…
Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this…
Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device…
A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized 0.13 $\mu$m CMOS technology is presented. The SPAD has a depleted absorption volume of approximately 15 $\mu$m x 15 $\mu$m x 18 $\mu$m.…
Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication…
The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a…
Integrated quantum photonics, which allows for the development and implementation of chip-scale devices, is recognized as a key enabling technology on the road towards scalable quantum networking schemes. However, many state-of-the-art…
Avalanche photodiodes (APDs) are the semiconducting analogue of photomultiplier tubes offering very high internal current gain and fast response. APDs are interesting for a wide range of applications in communications1, laser ranging2,…
A backside-illuminated (BSI) near-infrared enhanced silicon single-photon avalanche diode (SPAD) for time-of-flight (ToF) light detection and ranging applications is presented. The detector contains a 2 $\mu$m wide multiplication region…
We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic…
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing…
Configurations capable of maximizing both absorptance and polarization contrast were determined for 1550 nm polarized light illumination of different plasmonic structure integrated superconducting nanowire single-photon detectors (SNSPDs)…
Increasing the efficiency and reducing the footprint of on-chip photodetectors enables dense optical interconnects for emerging computational and sensing applications. Avalanche photodetectors (APD) are currently the dominating on-chip…
A single-photon avalanche detector (SPAD) for high-speed quantum-key generation has successfully been developed. It has the highest photon detection repetition frequency and the lowest dark count rate in the world, as a board-mountable…
Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical…
Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric…
The absorptance of p-polarized light in superconducting-nanowire single-photon detectors (SNSPDs) was improved by integrating (1) ~quarter-wavelength nano-optical cavity closed by a gold reflector (OC-SNSPD), (2) nano-cavity-array closed by…
Fast, efficient, and accurate depth-sensing is important for safety-critical applications such as autonomous vehicles. Direct time-of-flight LiDAR has the potential to fulfill these demands, thanks to its ability to provide high-precision…
Integrated photodetectors are essential components of scalable photonics platforms for quantum and classical applications. However, most efforts in the development of such devices to date have been focused on infrared telecommunications…
In order to build a new concept of photomultiplier based on silicon technology, design and characterization of 5x5 arrays of a new generation of single photon avalanche diodes (SPAD) manufactured by ST-Microelectronics have been performed.…
Single-photon avalanche diodes (SPADs) are becoming popular in time-of-flight depth-ranging due to their unique ability to capture individual photons with picosecond timing resolution. However, ambient light (e.g., sunlight) incident on a…