Related papers: A Perspective on Electrical Generation of Spin Cur…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
Magnetic nanodevices usually include a free layer whose configuration can be changed by spin-polarized current via the spin transfer effect, and a fixed reference layer. Here, we demonstrate that the roles of the free and the reference…
Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then…
The generation of collinear spin current (CSC), where both the propagation direction and spin-polarized direction aligned perpendicularly to the applied charge current, is crucial for efficiently manipulating systems with perpendicular…
Magnetic skyrmions are nanoscale spin whirlpools that promise breakthroughs in future spintronic applications. Controlled generation of magnetic skyrmions by electric current is crucial for this purpose. While previous studies have…
Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current…
Physical devices exhibiting stochastic functions with low energy consumption and high device density have the potential to enable complex probability-based computing algorithms, accelerate machine learning tasks, and enhance hardware…
We demonstrate that spin current can be generated by an ac voltage in a one-channel quantum wire with strong repulsive electron interactions in the presence of a non-magnetic impurity and uniform static magnetic field. In a certain range of…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
Precessing ferromagnets are predicted to inject a spin current into adjacent conductors via Ohmic contacts, irrespective of a conductance mismatch with, for example, doped semiconductors. This opens the way to create a pure spin source spin…
Spin insulatronics covers efforts to generate, detect, control, and utilize high-fidelity pure spin currents and excitations inside magnetic insulators. Ultimately, the new findings may open doors for pure spin-based information and…
The interconversion between charge and spin degrees of freedom is of both fundamental and technological relevance in spintronics. While a non-equilibrium spin density and a charge current are related by the well known Rashba-Edelstein…
Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the…
Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNG) can consume orders of magnitude less energy per bit than CMOS pseudo-RNG. Here, we numerically investigate with a macrospin Landau-Lifshitz-Gilbert…
A major challenge of spintronics is in generating, controlling and detecting spin-polarized current. Manipulation of spin-polarized current, in particular, is difficult. We demonstrate here, based on calculated transport properties of…
We propose an electrically driven spin injector into normal metals and semiconductors, which is based on a magnetic tunnel junction (MTJ) subjected to a microwave voltage. Efficient functioning of such an injector is provided by…
We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that…
We propose a ``spin-guide'' source for generation of electric currents with a high degree of spin polarization, allowing long-distance transmission of the spin-polarization. In the spin-guide scheme proposed here, a non-magnetic conducting…
Spin currents offer a way to control static and dynamic magnetic properties, and therefore they are crucial for next-generation MRAM devices or spin-torque oscillators. Manipulating the dynamics is especially interesting within the context…