Related papers: Geometric interference in a high-mobility graphene…
We demonstrated that a triple-gated GaAs quantum point contact, which has an additional surface gate between a pair of split gates to strengthen the lateral confinement, produces the well-defined quantized conductance and Fabry-P\'erot-type…
Topological insulators are materials that have a gapped bulk energy spectrum, but contain protected in-gap states appearing at their surface. These states exhibit remarkable properties such as unidirectional propagation and robustness to…
We show how a new quantum property, a geometric phase, associated with scattering states can be exhibited in nanoscale electronic devices. We propose an experiment to use interference to directly measure the effect of the new geometric…
The core-level and valence band electronic structure of the well-defined near-surface layer of n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy before and after modification of the layer by an…
Scattering processes in quantum materials emerge as resonances in electronic transport, including confined modes, Andreev states, and Yu-Shiba-Rusinov states. However, in most instances, these resonances are driven by a single scattering…
We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to…
In a heterostructure of graphene and the ferromagnetic insulator EuO, the Eu atoms induce proximity exchange and inter-valley interactions in the graphene layer. Constrained by the lattice symmetries, and guided by ab initio calculations, a…
Measurements of fractional multiples of the {\nu}=2 plateau quantized Hall resistance (R_H {\approx} 12906 {\Omega}) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated…
Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in…
A massive quantum particle on a two-dimensional curved surface experiences a surface-geometry induced attractive potential that is characterized by the radii of curvature at a given point. With bilayer graphene sheets and carbon…
Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems…
Topological insulators have an insulating bulk but a metallic surface. In the simplest case, the surface electronic structure of a 3D topological insulator is described by a single 2D Dirac cone. A single 2D Dirac fermion cannot be realized…
The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…
The Fermi energies of electrons and holes and their densities in different graphene layers (GLs) in the n- and p-regions of the electrically induced n-i-p junctions formed in multiple-GL structures are calculated both numerically and using…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its…
Recent experiments have shown that electronic Mach-Zehnder interferometers of unprecedented fidelities could be built using a graphene pn junction in the quantum Hall regime. In these junctions, two different edge states corresponding to…
Scanning gate microscopy is used to locally investigate electron transport in a high-mobility two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Using quantum point contacts (QPC) we observe branches caused by electron…
Interference of double moire patterns of graphene (G) encapsulated by hexagonal boron nitride (BN) can alter the electronic structure features near the primary/secondary Dirac points and the electron-hole symmetry introduced by a single…
Inverted-band $pn$ junctions in two-dimensional materials offer a promising platform for electron optics in condensed matter, as they allow to manipulate and guide electron beams without the need for spatial confinement. In this work, we…