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Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…
Recently orbital Hall current has attracted attention as an alternative method to switch the magnetization of ferromagnets. Here we present our findings on electrical switching of antiferromagnetic state in Mn3Sn/Cr, where despite the much…
With the advent of increasingly elaborate experimental techniques in physics, chemistry and materials sciences, measured data are becoming bigger and more complex. The observables are typically a function of several stimuli resulting in…
Field-free deterministic switching of perpendicular ferromagnets is a central challenge for spintronics applications, typically requiring explicit symmetry breaking. Here we show that deterministic switching can instead be achieved through…
The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based…
Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with N\'eel order in an antiferromagnetic CrSb and…
Spin waves are collective perturbations in the orientation of the magnetic moments in magnetically ordered materials. Their rich phenomenology is intrinsically three-dimensional; however, the three-dimensional imaging of spin waves has so…
Half-metallic ferromagnets show 100% spin-polarization at the Fermi level and are ideal candidates for spintronic applications. Despite the extensive research in the field, very few materials have been discovered so far. Here we present…
Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an…
We consider current-induced spin-transfer torque on an antiferromagnet in a dual spin-valve setup. It is demonstrated that a net magnetization may be induced in the AFM by partially or completely aligning the sublattice magnetizations via a…
Electric field-induced magnetization switching in multiferroics is intriguing for both fundamental studies and potential technological applications. Here, we review the recent developments on electric field-induced magnetization switching…
We have proposed the phenomenological description of polarization switching peculiarities in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly we have modified Landau-Ginsburg approach shown…
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
We fabricated Pt/La0.5Ba0.5MnO3 ultrathin films with integration to the PbZr0.2Ti0.8O3 ferroelectric. Strong Topological Hall Effect can be measured across a wide temperature range, which can be turned on and off corresponding to the…
Phase transitions driven by external stimuli are central to condensed matter physics, providing critical insights into symmetry breaking and emergent phenomena. Recently, ferrimagnetic (FiM) Mn$_3$Si$_2$Te$_6$ has attracted considerable…
Antiferromagnetic spintronics offers the potential for higher-frequency operations and improved insensitivity to magnetic fields compared to ferromagnetic spintronics. However, previous electrical techniques to detect antiferromagnetic…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
We study the multiferroic properties in the distorted tetrahedral quasi-one dimensional spin system Cu$_3$Mo$_2$O$_9$, in which the effects of the low dimensionality and the magnetic frustration are expected to appear simultaneously. We…